2017
DOI: 10.9729/am.2017.47.3.95
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Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Abstract: High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogene… Show more

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