Resolution of electrooptic light valves

Roach, W. R.

doi:10.1109/t-ed.1974.17949

Cited by 43 publications

(23 citation statements)

References 11 publications

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“…A# N I/ f and this dependence was observed in experiment. Frequency dependence according to (2) is shown in Figure 2 by solid lines 1 and 2 for two values of space charge layer thickness-3 y and 50 y. To summarize, volume charge distribution is formed during recording, determining a frequency dependence of the diffraction efficiency of the device.…”

Section: Optical Information Recording In Bi12sio20mentioning

confidence: 98%

Optical information recording in Bi12SiO20

et al. 1978

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Section: Optical Information Recording In Bi12sio20mentioning

confidence: 98%

Optical information recording in Bi12SiO20

et al. 1978

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“…A number of device models were developed to analyze the resolution performance of various assumed space-charge distributions, and some simple transport models were even constructed [7][8][9][10]. The overall device performance was fairly modest, and the applied voltage requirements were quite high, ~1 kV.…”

Section: Background On the Mqw-oaslmmentioning

confidence: 99%

“…A Fourier decomposition of this field gives the far field diffraction pattern which consists of many diffracted beams traveling in directions given by k d = k r + mK where m is the diffraction order. This type of diffraction is known as Raman-Nath diffraction, and the input diffraction efficiency in order m, which is the power diffracted into order m divided by the incident power ofE read , is given by [31] Tim = *~a°L^(|81) (2)(3)(4)(5)(6)(7)(8) where J m is the m l order Bessel function. Typically, only the first-order diffracted beam is of interest and is given by…”

Section: S« -E Read E""'t = W 'V"v 8 '^" (2-7)mentioning

confidence: 99%

“…The lifetime also depends strongly on the subband energy. It can be estimated from the Fowler-Nordheim tunneling equation for a particle with mass m and subband energy E i as [53] % t~e 3 eFh (3)(4)(5)(6)(7)(8)(9) and decreases strongly for higher subbands. Thus, even though higher subbands may not be significantly populated, at large fields their carrier lifetimes may be short enough to allow them to dominate the escape process.…”

Section: \ •?-+?£ < 3 -6 >mentioning

confidence: 99%

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Transport modeling of multiple-quantum-well optically addressed spatial light modulators

Smith

Hesselink

1997

Journal of Applied Physics

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Optically addressed spatial light modulators are essential elements in any optical processing system. Applications such as optical image correlation, short pulse auto-correlation, and gated holography require high speed, high resolution devices for use in compact, high throughput systems. Other important device criteria include ease of fabrication and operation. In this work we study the transport dynamics of a new kind of optically addressed spatial light modulator that uses semi-insulating or intrinsic quantum-well material to produce high performance devices without the need for pixellation or complicated device design.In response to an incident intensity pattern, basic device operation occurs through the screening of an applied voltage via the optical generation, transport, and trapping of photocarriers. A field pattern which mimics the incident intensity pattern is produced by the screening process. This generates strong index and absorption holograms via the quantum confined Stark effect. These holograms can be read out simultaneously with a probe beam to provide dynamic read/write operation.Overall device performance is determined by the transport of photocarriers during the field screening process. We have developed a transient, two-dimensional drift-diffusion model to describe both free and well-confined carrier transport as well as nonlinear effects such as velocity saturation and field-dependent carrier emission from quantum wells. Various analytical and numerical results for the internal carrier and space charge distributions, different screening regimes, and relative carrier contributions to the screening process aregiven. An experimental characterization of a GaAs/AlGaAs device using optical IV transmission and photocurrent techniques is also presented and used to verify the main results of the transport model.Analytical and numerical analyses of various transport effects that limit the resolution are also given. We show that, contrary to the results of earlier device models, both the speed response and resolution can be simultaneously optimized using appropriate device design. Using realistic device parameters, frame rates of 100 kHz at 10 mW/cm 2 intensity with 7 \im device resolution are predicted.First, I would like to thank my advisor, Bert Hesselink, for his support and encouragement over these past several years. He gave me a great deal of freedom not only in choosing this topic, but in determining the course of research. He has allowed me to pursue a number of interests, both directly and not so directly, related to this project. It is an opportunity that I have greatly appreciated. I would also like to thank two researchers from AT&T Bell Laboratories who have been of great help: William Coughran who got me started on semiconductor device modeling, and Afshin Partovi who fabricated and generously provided the samples used in our experiments.One of the great things about being in a group as large as ours is that there are always interesting and useful people around. I would especially like t...

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“…So the performance of the SLMs is greatly determined by operation of these effects in the elements. The solutions for the electrostatic fields have been reported [5][6][7][8]. The linear longitudinal electrooptic effects in the ferroelectric crystals were studied [9][10][11].…”

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confidence: 99%

Electrooptical modulation characteristics of charge-addressed ferroelectric crystal spatial light modulators

Zhang

Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials

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A charge sensitivity modulation transfer fimction (MTF) of charge-addressed ferroelectric crystal spatial light modulator, which consists of obliquecut crystal plate and two isotropically dielectric layers, is derived as a function of the geometrical parameters, dielectric and electro-optic coefficients. The electrooptical modulation characteristics such as sensitivity, resolution and longitudinal-to transversetransfer ratio are extracted from this function. The orientation dependence of these characteristics for (ZYw)B-cut LiNbO3 are presented with regard to the MSLM configuration. The results indicate some improvement aspects for device design.The transformation from the charge image to the readout light amplitude modulation is a fundamental process in several electrooptical spatial light modulators(SLM's) such as MSLM[ 11,, TITUS[3] and CTPSLM 's[4]. This process, in general, is performed by a charge-addressed modulation element in the device configuration, based on both the dielectric and electrooptic effects. So the performance of the SLMs is greatly determined by operation of these effects in the elements. The solutions for the electrostatic fields have been reported [5][6][7][8]. The linear longitudinal electrooptic effects in the ferroelectric crystals were studied [9][10][11]. The halfvoltage V , was generally used as a figure of merit, which is strongly dependent on the light and field direction in the crystals. So previous MSLMs took the (ZYw)SS0 cut L a o 3 in modulation element [l2]. However, in this case the dielectric coefficients are also anisotropical, a more complete treatment is necessary.In this paper we derive a charge sensitivity modulation transfer function of the element w t h regard to MSLM configuration, which represents the dependence of chargeaddressed electrooptical modulation transformation on orientation of the crystals. The characteristics such as charge sensitivity, resolution, longitudinal-to transverse-transfer ratio, and natural birefringence are treated Description of Theoretical DevelopmentA schematic diagram of the electrooptical modulation element is shown in Fig.1. In the operation mode of MSLM, as an example, a charge density distribution o(x,y) (=ab+a~cos;?~tf.r) induced by input image is deposited at z=O interface between vacuum gap 1, and blocking layer Id. The readout light is in the direction of OZ and reflected at the interface between ld and crystal plate 1, . The crystal is usually oblique-cut and anisotropic for dielectric and electrooptic effects. Here the transformation from charge distribution to output light -B c e, , 1 , v-z t 'x Fig.1. Schematic dielectric structure of charge-addressed modulation element. Orientation of coordinate system OXYZ related to Oabc is presented. is modeled as a space-invariant linear system with a charge sensitivity modulation transfer function (MTF), which can be divided into charge-voltage MTF and voltage-light amplitude transfer coefficients. The derived resultant charge sensitivity MTF can be written as: g;sinh[w(Z,, -/,)I W E...

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Resolution of electrooptic light valves

Cited by 43 publications

References 11 publications

Optical information recording in Bi12SiO20

Optical information recording in Bi12SiO20

Transport modeling of multiple-quantum-well optically addressed spatial light modulators

Electrooptical modulation characteristics of charge-addressed ferroelectric crystal spatial light modulators

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