2017
DOI: 10.7567/apex.10.105601
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Resolving glass transition in Te-based phase-change materials by modulated differential scanning calorimetry

Abstract: Glass transitions of Te-based phase-change materials (PCMs) were studied by modulated differential scanning calorimetry. It was found that both Ge 2 Sb 2 Te 5 and GeTe are marginal glass formers with ΔT (= T x % T g ) less than 2.1°C when the heating rate is below 3°C min %1. The fragilities of Ge 2 Sb 2 Te 5 and GeTe can be estimated as 46.0 and 39.7, respectively, around the glass transition temperature, implying that a fragile-to-strong transition would be presented in such Te-based PCMs. The above results … Show more

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Cited by 13 publications
(14 citation statements)
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“…Set pulses of a 1 μs duration and with a 20 μs trailing time are used to heat the GST above the crystallization temperature (Tx) and then maintain the high temperature long enough to facilitate complete crystallization. 33,55 Reset pulses feature a higher current for a shorter duration of 500 ns to rapidly raise the local temperature above the melting temperature of GST (Tmelt ~600 °C). The pulse is then switched off quickly with a 20 ns trailing time to achieve an effective melt-quench that freezes in the amorphous phase.…”
Section: Mainmentioning
confidence: 99%
“…Set pulses of a 1 μs duration and with a 20 μs trailing time are used to heat the GST above the crystallization temperature (Tx) and then maintain the high temperature long enough to facilitate complete crystallization. 33,55 Reset pulses feature a higher current for a shorter duration of 500 ns to rapidly raise the local temperature above the melting temperature of GST (Tmelt ~600 °C). The pulse is then switched off quickly with a 20 ns trailing time to achieve an effective melt-quench that freezes in the amorphous phase.…”
Section: Mainmentioning
confidence: 99%
“…The transition temperature is strongly dependent on the heating rate, interfaces and composition of the particular alloy. 26,63,64…”
Section: Local Structure Of Chalcogenidebased Phase Change Alloysmentioning
confidence: 99%
“…23 However, since phase change alloys are poor glass formers, rapid cooling rates are required to suppress the recrystallization of the alloy when it is to be amorphized. 17,[24][25][26][27] This can be achieved by appropriate device design. Moreover, the long-term stability of phase change materials is an issue and has to be improved by materials design.…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, values of T g for GeTe reported in literature vary from as low as 150 C up to 230 C. [16][17][18][19][20][21] This large variation results in a large and unfavorable uncertainty when it comes to predicting crystallization kinetics for PCM-based data storage devices. For this reason, an accurate value based on experimental data for the glass transition temperature T g of GeTe is highly desirable.…”
mentioning
confidence: 99%