Resolving trapping effects by scanning microwave microscopy

Hommel, S.; Killat, N.; Schweinboeck, T.; Altes, A.; Kreupl, Franz

doi:10.1016/j.microrel.2018.11.018

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…The scanning microwave microscopy was initially developed for calibrating doping measurements in semiconductors [24][25][26][27][28] while the latest applications were carried out on metals and their alloys [20][21][22]29].…”

Section: Theoretical Approachmentioning

confidence: 99%

Submicronic-Scale Mechanochemical Characterization of Oxygen-Enriched Materials

Garnier,

Lesniewska,

Optasanu

et al. 2024

Nanomaterials

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Conventional techniques that measure the concentration of light elements in metallic materials lack high-resolution performance due to their intrinsic limitation of sensitivity. In that context, scanning microwave microscopy has the potential to significantly enhance the quantification of element distribution due to its ability to perform a tomographic investigation of the sample. Scanning microwave microscopy associates the local electromagnetic measurement and the nanoscale resolution of an atomic force microscope. This technique allows the simultaneous characterization of oxygen concentration as well as local mechanical properties by microwave phase shift and amplitude signal, respectively. The technique was calibrated by comparison with nuclear reaction analysis and nanoindentation measurement. We demonstrated the reliability of the scanning microwave technique by studying thin oxygen-enriched layers on a Ti-6Al-4V alloy. This innovative approach opens novel possibilities for the indirect quantification of light chemical element diffusion in metallic materials. This technique is applicable to the control and optimization of industrial processes.

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Section: Theoretical Approachmentioning

confidence: 99%

Submicronic-Scale Mechanochemical Characterization of Oxygen-Enriched Materials

Garnier,

Lesniewska,

Optasanu

et al. 2024

Nanomaterials

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“…100 nm. For a material with a conductivity σ and a permittivity ε, the AFM sMIM tip-sample impedance is a complex impedance [26], equivalent to a capacitor in parallel with a resistance (Figure 1). The incident microwave signal interacts with the sample resulting in a transmitted wave and a reflected wave.…”

Section: Experimental Smim Measurementsmentioning

confidence: 99%

“…100 nm. For a material with a conductivity σ and a permittivity ε, the AFM sMIM tip–sample impedance is a complex impedance [ 26 ], equivalent to a capacitor in parallel with a resistance ( Fig. 1 ).…”

Section: Experimental Smim Measurementsmentioning

confidence: 99%

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

Germanicus¹,

Wolf²,

Lallemand³

et al. 2020

Beilstein J. Nanotechnol.

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This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both “front end of line” (FEOL) (doped semiconducting layers) and “back end of line” (BEOL) layers (metallization, trench dielectric, and isolation) of highly integrated microelectronic devices. Based on atomic force microscopy, an electromagnetically shielded and electrically conductive tip is used in scanning microwave impedance microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal–insulator–semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D architecture is analysed. sMIM measurements of the different layers of the PIN diode are presented and discussed in terms of detection mechanism, sensitivity, and precision. In the second part, supported by analytic calculations of the equivalent nano-MIS capacitor, a new multidimensional approach, including a complete parametric investigation, is performed with a dynamic spectroscopy method. The results emphasize the strong impact, in terms of distinction and location, of the applied bias on the local sMIM measurements for both FEOL and BEOL layers.

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Recent Progress of Electromagnetic Field Characterization of Chip Surface

Wen,

Pei,

Wang

et al. 2024

Adv Devices Instrum

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The rapid development of chip manufacturing technology has increased the demand for precise characterization techniques. The characterization technique of the physical field on the surface of a chip is crucial for analyzing chip failures and diagnosing faults. In this review, the latest advancements based on different measurement mechanisms are analyzed and summarized for the electromagnetic field characterization of the chip surfaces. In addition, their advantages and limitations are discussed. Finally, prospects for future development are presented.

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Resolving trapping effects by scanning microwave microscopy

Cited by 3 publications

References 11 publications

Submicronic-Scale Mechanochemical Characterization of Oxygen-Enriched Materials

Submicronic-Scale Mechanochemical Characterization of Oxygen-Enriched Materials

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

Recent Progress of Electromagnetic Field Characterization of Chip Surface

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