Resonance Analysis Focusing on Stray Inductance and Capacitance of Laminated Bus Bars

Abstract

Extensive research has been undertaken in recent years for the development of the next generation of power devices, such as silicon carbide (SiC) and gallium nitride (GaN) devices, and high-speed switching circuits have been implemented. In such cases, high-speed switching operations may generate electromagnetic noise and a surge voltage in the power electronics circuits. Stray inductance and capacitance in the circuits are critical parameters of the noise and surge voltage. Therefore, it is important to design and analyze the stray inductance and capacitance of the direct current (DC)-side circuit of an inverter. This paper proposes a laminated bus bar design procedure in consideration of both the inductance and the capacitance of the bus bar. The effectiveness of the design procedure was tested using a buck converter circuit rated at 400 V and 70 A with an SiC MOSFET and SiC diode.

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

“…By varying the gate resistance, a trade-off between voltage spikes and switching losses can be achieved [89]. Also, optimizing input supply inductor design can suppress high-frequency transmission line effects [95] and low inductive bus bars on the input supply side can effectively reduce SiC MOSFET overvoltage [101,102].…”