Resonance Fluorescence of GaAs Quantum Dots with Near-Unity Photon Indistinguishability

Schöll, Eva; Hanschke, Lukas; Schweickert, Lucas; Zeuner, Katharina D.; Reindl, Marcus; Silva, Saimon Filipe Covre da; Lettner, Thomas; Trotta, Rinaldo; Finley, Jonathan J.; Müller, Kai; Rastelli, Armando; Zwiller, Val; Jöns, Klaus D.

doi:10.1021/acs.nanolett.8b05132

Cited by 90 publications

(85 citation statements)

References 47 publications

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“…Semiconductor quantum dots (QDs) are excellent as a bright source of highly indistinguishable single photons [1][2][3][4][5][6][7][8] and entangled photon pairs [9][10][11][12][13][14][15][16] . A QD can host a single spin [17][18][19][20] which, however, has a too short coherence time for applications in quantum communication [21][22][23][24] .…”

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confidence: 99%

Correlations between optical properties and Voronoi-cell area of quantum dots

et al. 2019

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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over µm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved. arXiv:1902.10145v3 [cond-mat.mes-hall]

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Correlations between optical properties and Voronoi-cell area of quantum dots

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“…Rabi oscillations in the time‐domain and the characteristic Mollow triplet in the spectral domain (Figure f) have been demonstrated . The main challenge to implementing resonant excitation lies in effectively distinguishing resonance fluorescence signals and backscattered excitation laser, which is usually achieved by separating the collection and pump paths into either two orthogonal spatial directions or polarizations . For example, in the former scheme, a QD‐containing micro‐pillar or planar cavity can be illuminated from side, while the QD resonance fluorescence that is vertically emitted into free space is collected above such structures.…”

Section: Advanced Qd Excitation Methodsmentioning

confidence: 99%

Section: Advanced Qd Excitation Methodsmentioning

confidence: 99%

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Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Zhao

Chen

et al. 2019

Adv Quantum Tech

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Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on‐demand generation of single‐photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. This review is focused on the latest significant progress of QD photonic devices. First, advanced technologies in QD growth are discussed, with special attention to droplet epitaxy and site‐controlled QDs. Then, the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques is overviewed. The discussion is extended to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light‐emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.

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“…The wavelength range of 400 -700 nm is significant for fluorescence microscopy [32,33] and for studying celestial objects from space and ground-based observatories. Many high purity III-V QDs emit at ∼ 800 nm [34,35] likewise quantum memories based on electromagnetically induced transparency in Rubidium cells [36]. 1550 nm wavelength is the widely used wavelength for quantum communication technology.…”

Section: Snspds Efficiencies and Timing Jitter Characterization As A mentioning

confidence: 99%

Superconducting nanowire single photon detectors operating at temperature from 4 to 7 K

Gourgues¹,

Los²,

Zichi³

et al. 2019

Opt. Express

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We experimentally investigate the performance of NbTiN superconducting nanowire single photon detectors above the base temperature of a conventional Gifford-McMahon cryocooler (2.5 K). By tailoring design and thickness (8 -13 nm) of the detectors, high performance, high operating temperature, single-photon detection from the visible to telecom wavelengths are demonstrated. At 4.3 K, a detection efficiency of 82 % at 785 nm wavelength and a timing jitter of 30 ± 0.3 ps are achieved. In addition, for 1550 nm and similar operating temperature we measured a detection efficiency as high as 64 %. Finally, we show that at temperatures up to 7 K, unity internal efficiency is maintained for the visible spectrum. Our work is particularly important to allow for the large scale implementation of superconducting single photon detectors in combination with heat sources such as free-space optical windows, cryogenic electronics, microwave sources and active optical components for complex quantum optical experiments and bio-imaging.

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Resonance Fluorescence of GaAs Quantum Dots with Near-Unity Photon Indistinguishability

Cited by 90 publications

References 47 publications

Correlations between optical properties and Voronoi-cell area of quantum dots

Correlations between optical properties and Voronoi-cell area of quantum dots

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Superconducting nanowire single photon detectors operating at temperature from 4 to 7 K

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