Resonance Raman Scattering Spectroscopy of Four-Monolayer Thick MoS2 Films

MoS2oxidative etching caught in the act: formation of single (MoO3)nmolecules

“…Raman peaks at 821 and 996 cm À1 come from a double-coordinated oxygen stretching mode, n(OMo 2 ), and a terminal oxygen stretching mode, n(O]Mo), respectively. However, a weak MoS 2 peak at around 820 cm À1 (second order Raman mode of A 1g in 31,47 and hydrates 48 922, 31,49 923, 47 and 920 48 Mo-O 2 mode in MoO 3Àx quantum dots 49 MoS 2 ) [34][35][36] and a broad silicon peak between 930 and 1000 cm À1 (second order Raman scattering of Si) 37 effectively mask them.…”