2022
DOI: 10.1088/1742-6596/2227/1/012020
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Resonant Activation of Resistance Switching in Memristors Based on YSZ Films with Au Nanoparticles

Abstract: The resonant activation of resistance switching (RS) of a memristor based on an yttria stabilized zirconia (YSZ) film with embedded Au nanoparticles (NPs) was investigated. The switching was made by triangular pulses with high frequency (HF) sinusoid added. A non-monotonous dependence a ratio of the electric current through the memristor in the low resistive state to the current in the high resistive one on the HF sinusoid frequency was found. The effect was explained by a finite electron tunneling time betwee… Show more

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“…Other studies developed a model for device behavior based on oxygen vacancies redistribution (Guseinov et al, 2017). Further electrical characterization techniques revealed insights into ions migration and resistive switching activity (Tikhov et al, 2018;Ryabova et al, 2022), while also demonstrating multi-level device capabilities and neuromorphic behavior akin to Spike Timing-Dependent Plasticity (STDP) (Emelyanov et al, 2019).…”
Section: Introductionmentioning
confidence: 99%
“…Other studies developed a model for device behavior based on oxygen vacancies redistribution (Guseinov et al, 2017). Further electrical characterization techniques revealed insights into ions migration and resistive switching activity (Tikhov et al, 2018;Ryabova et al, 2022), while also demonstrating multi-level device capabilities and neuromorphic behavior akin to Spike Timing-Dependent Plasticity (STDP) (Emelyanov et al, 2019).…”
Section: Introductionmentioning
confidence: 99%