2016
DOI: 10.1016/j.nanoen.2016.08.020
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Resonant-cavity-enhanced a-Ge:H nanoabsorber solar cells for application in multijunction devices

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Cited by 15 publications
(11 citation statements)
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“…To the best of our knowledge, this is the highest value ever reported for any inorganic resonant cavity solar cell with a such thin semiconductor layer stack. In previously published studies our group demonstrated solar cells, which exploited the cavity effect in a-Ge:H and reached efficiencies of 2.08% [24] and 3.6% [6] in single junction devices and 4.0% [25] in a multi junction device. These results show that the p-i-n structure with a total thickness of only 40 nm can provide significant current density and that the cavity structure is a very promising way to realize efficient solar cells with ultrathin absorber layers.…”
Section: Amorphous Germanium Solar Cellmentioning
confidence: 99%
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“…To the best of our knowledge, this is the highest value ever reported for any inorganic resonant cavity solar cell with a such thin semiconductor layer stack. In previously published studies our group demonstrated solar cells, which exploited the cavity effect in a-Ge:H and reached efficiencies of 2.08% [24] and 3.6% [6] in single junction devices and 4.0% [25] in a multi junction device. These results show that the p-i-n structure with a total thickness of only 40 nm can provide significant current density and that the cavity structure is a very promising way to realize efficient solar cells with ultrathin absorber layers.…”
Section: Amorphous Germanium Solar Cellmentioning
confidence: 99%
“…The MOMO reflector shows Fabry-Perot resonances due to the superposition of partial light waves inside the inner oxide layer sandwiched between the two metallic Ag layers. The peak positions of the resonances are determined by the optical thickness of this AZO layer [25,51]. A fine adjustment of the peak positions can be achieved by varying the thickness of the outer AZO layer that additionally serves as a protection for the outer Ag layer.…”
Section: Spectrally Selective Solar Cellsmentioning
confidence: 99%
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“…Ultrathin semiconductor materials are promising building blocks for solar photovoltaic (PV) [1] and photoelectrochemical (PEC) [2] cells and other solar energy harvesting devices, because they have reduced bulk recombination, higher internal quantum efficiency, [3,4] and exhibit new properties such as Gires-Tournois resonance, so these studies focused on designing the reflection phase shift at the interface between the semiconductor layer and the substrate [16,17] to achieve destructive interference yet with absorbed energy distribution less investigated. Our metasurface strategy is to tune not only reflection phase shift, that is, optical cavity behaviors, but also electromagnetic energy dissipation, that is, dissipative behaviors, to achieve nearperfect absorption specifically in the semiconductor film, which is of crucial importance for solar PV and PEC applications.…”
Section: Introductionmentioning
confidence: 99%