Resonant-cavity-enhanced single photon avalanche diodes on double silicon-on-insulator substrates

Ghioni, M.; Armellini, Giacomo; Maccagnani, Piera; Rech, Ivan; Emsley, M.K.; Ünlü, M. Selim

doi:10.1080/09500340802272332

Cited by 18 publications

(10 citation statements)

References 24 publications

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“…These usually involve thinner absorption regions so there can be a tradeoff between detection efficiency and timing jitter, although there is an effort to regain some efficiency by using cavity enhancement around the thinner absorber. 278 An in-depth look at the details of this type of tradeoff can be found in Ref. 313 and a commercial example of this tradeoff can be seen in Ref.…”

Section: Single-photon Avalanche Photodiodementioning

confidence: 99%

Invited Review Article: Single-photon sources and detectors

Eisaman

Fan²,

Migdall³

et al. 2011

Review of Scientific Instruments

1,328

1,317

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Section: Single-photon Avalanche Photodiodementioning

confidence: 99%

Invited Review Article: Single-photon sources and detectors

Eisaman

Fan²,

Migdall³

et al. 2011

Review of Scientific Instruments

1,328

1,317

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“…Due to the advantage of ultimate sensitivity combined with excellent timing accuracy, single-photon detectors, especially the single-photon avalanche diodes (SPADs), are important [63,64]. As reported in [65,66], the first RCE-SPAD was fabricated on a reflecting silicon-on-insulator (SOI) substrate.…”

Section: Resonant-cavity-enhanced Photodetectorsmentioning

confidence: 99%

Overcoming the Bandwidth-Quantum Efficiency Trade-Off in Conventional Photodetectors

Zhou¹,

Chee²

2019

Photodetectors [Working Title]

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Optical systems and microwave photonics applications rely heavily on high-performance photodetectors having a high bandwidth-efficiency product. The main types of photodetector structures include Schottky and PIN-photodiodes, heterojunction phototransistors, avalanche photodetectors, and metal-semiconductor-metal photodetectors. Verticallyilluminated photodetectors intrinsically present bandwidth-efficiency limitations, but these have been mitigated by new innovations over the years in quantum well photodetectors, edge-coupled photodetectors and resonant-cavity enhanced photodetectors for improved photophysical characteristics. Edge-coupled ultra-high-speed photodetectors have yielded high conversion efficiencies, and the active device structure of resonantcavity-enhanced photodetectors allows wavelength selectivity and optical field enhancement due to resonance, enabling photodetectors to be made thinner and hence faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Single-photon avalanche diodes have been developed, which combine an ultimate sensitivity with excellent timing accuracy. Further advances in addressing the bandwidthquantum efficiency trade-off have incorporated photon-trapping nanostructures and plasmonic nanoparticles. Nanowire photodetectors have also demonstrated the highest photophysical performance to date.

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“…However, SPADs with lower jitter have an improved temporal resolution, which corresponds to a finer depth resolution in time-of-flight applications. A thin-junction, blue-shifted SPAD has a decent timing jitter of 35 ps full width at half maximum (FWHM) 8 – 11 . Yet due to the low absorption in the thin layer, such an SPAD has a low PDE compared to a thick-junction device 12 .…”

Section: Introductionmentioning

confidence: 99%

“…Thick silicon is used to extend photon absorption regions in three ways (see Supplementary Fig. 1 for schematic illustration): extension of the avalanche region 12 , extension of the depletion region to drift carriers toward the avalanche region 14 , or extension of the neutral region 11 . The first two methods broaden the jitter, while the last one significantly extends the tail (i.e., an increased full width at 1% maximum in the jitter distribution) due to the slow diffusion process.…”

Section: Introductionmentioning

confidence: 99%

“…The first two methods broaden the jitter, while the last one significantly extends the tail (i.e., an increased full width at 1% maximum in the jitter distribution) due to the slow diffusion process. An alternative solution to improving PDE is using a resonant cavity to create an optical resonance in the vertical direction, as in double-SOI-substrate, resonant-cavity-enhanced (RCE) SPADs 11 . However, the sharp resonances and low injection-angle tolerance 15 narrow their applications.…”

Section: Introductionmentioning

confidence: 99%

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Silicon single-photon avalanche diodes with nano-structured light trapping

et al. 2017

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Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.

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Resonant-cavity-enhanced single photon avalanche diodes on double silicon-on-insulator substrates

Cited by 18 publications

References 24 publications

Invited Review Article: Single-photon sources and detectors

Invited Review Article: Single-photon sources and detectors

Overcoming the Bandwidth-Quantum Efficiency Trade-Off in Conventional Photodetectors

Silicon single-photon avalanche diodes with nano-structured light trapping

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