Resonant Cavity Enhanced Thyristor-Based Photodetectors for Optical Receivers

Pile, Brian; Taylor, G.W.

doi:10.1109/jqe.2016.2609846

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…The n + and p + regions act respectively as the n-emitter (cathode) and p-emitter (anode), and the intermediate N-well and P-sub act as the n-base and p-base, respectively. Like a normal thyristor, the n + -p-n-p + regions can also work as two cross-coupled bipolar transistors, which the collector of the pnp + (n + pn) transistor is connected to the base of the n + pn (pnp + ) transistor [16]. The intermediate control gate, labeled as Gate, is a polysilicon gate coupled capacitively to the N-well and P-sub regions through the gate oxide.…”

Section: B Device Configuration and Operation Principlementioning

confidence: 99%

“…In this paper, we report a different approach that uses a novel thyristor-based device for low-light level detection. Thyristors, with an intrinsic bi-stable feature for electrical conduction, have mostly been used to develop bi-stable optical controlled electrical switches [14]- [16]. Some researchers have used thyristors as long wavelength infrared photodetectors that operated at the off-state with low dark currents [17].…”

Section: Introductionmentioning

confidence: 99%

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Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Sun

Pan

et al. 2021

IEEE J. Electron Devices Soc.

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Thyristors operated at switching point are highly sensitive to external physical signals such as light or temperature. However, due to the instability of sensitive switching point, conventional thyristors are commonly used as optical switches and hardly applied for low-light level detection. In this work, a silicon-based gate-controlled lateral thyristor (GC-LT), which takes advantage of high sensitivity at low-light, is studied by numerical simulation. A thyristor photodetector circuit and a novel super-off Reset operation method are also proposed to bias the GC-LT over the switching point quickly and allow the photodetector to be operated in a monotonic dynamic multi-sampling mode to achieve high sensitivity to low-light. Simulation results show that the Reset time can be shortened to <10 s without trigging the GC-LT. The trigger time of the photodetector is sensitive to the optical power density ranging from 1×10 -9 to 2.5×10 -6 W/cm 2 . Furthermore, the average optical gain is about 8.0-6.3, approximately one order of magnitude higher than that of the Si pinned photodiode.

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Section: B Device Configuration and Operation Principlementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Sun

Pan

et al. 2021

IEEE J. Electron Devices Soc.

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Turn-ON Analysis for a Thyristor-Based Photoreceiver

Pile

Taylor

2017

IEEE J. Quantum Electron.

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Investigation of antenna-coupled Nb₅N₆ microbolometer THz detector with substrate resonant cavity

Jiang

Xiao

et al. 2018

Opt. Express

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Fabricating resonant cavities with conventional methods to improve the coupling efficiency of a detector in the terahertz (THz) region is difficult for the wavelength is too long. Here, we propose a solution by using the substrate cavity effect given that the substrate wavelength and thickness of the preparation device are in the same order. The planar dipole antenna-coupled NbN microbolometers with different substrate thicknesses were fabricated. The interference effect of the substrate cavity on the optical voltage response of the detector is analyzed experimentally and theoretically. The experimental results show that the optical response of the detector is determined by the length of the substrate cavity. Thus, the THz devices with different detection frequencies can be designed by changing the substrate cavity length. Furthermore, on the basis of this substrate cavity effect, an asymmetric coupled Fabry-Pérot (FP) cavity is constituted by simply placing a movable metallic planar mirror at the backside of the Si substrate. The incident THz radiation on the NbN microbolometer can be effectively manipulated by changing the substrate-mirror distance to modulate the phase relation between the reflect wave and the incident wave. The distinct radiation control can be observed, and the experiments can be well explained by numerically analyzing the responsivity dynamics that highlights the role of the FP cavity effect during radiation. All of the results discussed here can be extended to a broad range of frequency and other type of THz detectors.

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Resonant Cavity Enhanced Thyristor-Based Photodetectors for Optical Receivers

Cited by 3 publications

References 9 publications

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Turn-ON Analysis for a Thyristor-Based Photoreceiver

Investigation of antenna-coupled Nb₅N₆ microbolometer THz detector with substrate resonant cavity

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Resonant Cavity Enhanced Thyristor-Based Photodetectors for Optical Receivers

Cited by 3 publications

References 9 publications

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Turn-ON Analysis for a Thyristor-Based Photoreceiver

Investigation of antenna-coupled Nb5N6 microbolometer THz detector with substrate resonant cavity

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Investigation of antenna-coupled Nb₅N₆ microbolometer THz detector with substrate resonant cavity