Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

Lenox, C.; Nie, Hui; Yuan, Ping; Kinsey, Geoffrey S.; Homles, A.L.; Streetman, B. G.; Campbell, Joe C.

doi:10.1109/68.784238

Cited by 140 publications

(60 citation statements)

References 12 publications

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“…Since this ratio is a material property, for a given electric field, efforts to improve the APD performance have focused on optimizing the electric field profile and characterizing new materials. Recently, lower multiplication noise and higher gainbandwidth products have been achieved by sub micrometer scaling of the thickness of the multiplication region [4][5][6][7][8][9][10][11][12]. This is in direct contrast to what would have been predicted by the local-field model and is due to the nonlocal nature of impact ionization, which can be neglected if the thickness of the multiplication region is much greater than the "dead length", the distance over which carriers gain sufficient energy to impact ionize.…”

Section: Introductioncontrasting

confidence: 43%

Numerical Analysis of Homojunction Gallium Arsenide Avalanche Photodiodes (Gaas-Apds)

Mokari¹

2008

PIER B

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Abstract-In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of homojunction avalanche photodiode in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient.

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Section: Introductioncontrasting

confidence: 43%

Numerical Analysis of Homojunction Gallium Arsenide Avalanche Photodiodes (Gaas-Apds)

Mokari¹

2008

PIER B

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“…Lenox et al [11] measured the frequency response of a pair of similar, separate absorption, charge and multiplication APDs with In Al As multiplication regions of length m and m. We have fitted their measured values of gain-bandwidth product to (1) to obtain an effective value of mean carrier velocity for each device. was calculated using the expression of Kuvås and Lee [8], valid for large values of gain and conveniently independent of carrier velocities, using values for the ionization coefficients ratio taken from the work of Watanabe et al [12].…”

Section: Comparison With Experimentsmentioning

confidence: 99%

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton

Plimmer

et al. 2003

IEEE Trans. Electron Devices

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Article:Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.

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“…Extremely high BWE values are achieved using Schottky, p-type-intrinsic-n-type (p-i-n), and an avalanche type of RCE-PDs, which could not be reached with conventional VPD structures. 100-GHz bandwidth [6] and 25-GHz BWE [7] for Schottky, 46-GHz BWE [8] for p-i-n, 35-GHz low-gain bandwidth, [9] and 17-GHz BWE [10] for avalanche type of RCE-PDs are the record performances reported to date.…”

Section: Introductionmentioning

confidence: 99%

45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky Photodiodes

Bıyıklı¹,

Kimukin²,

Aytür³

et al. 2001

Optical Fiber Communication Conference and International Conference on Quantum Information

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Abstract-High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.

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Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

Cited by 140 publications

References 12 publications

Numerical Analysis of Homojunction Gallium Arsenide Avalanche Photodiodes (Gaas-Apds)

Numerical Analysis of Homojunction Gallium Arsenide Avalanche Photodiodes (Gaas-Apds)

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky Photodiodes

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