“…Two dimensional (2D) THz plasmons in silicon (Si) [4], III-V materials such as GaAs/AlGaAs [5] and GaN/AlGaN [6] heterostructures, and graphene [7,8] similarly are sub-wavelength compared to free-space electromagnetic waves, but have an additional degree of freedom due to the ability to control electron density, and thus the 2D plasma frequency, through a field effect. It is this latter capability that has generated interest in 2D plasmonic devices [9,10] such as THz detectors [11][12][13][14], mixers [15,16], emitters [17,18], and field enhancement structures [19].…”