2002
DOI: 10.1063/1.1525851
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Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

Abstract: We report on the experiments on resonant photoresponse of the gated two-dimensional electron gas to the terahertz radiation. The visible-light-induced, metastable increase of the carrier density in the transistor channel shifts the resonance position to the higher gate voltages, in agreement with plasma wave detection theory. In this way, an unambiguous proof of the origin of the observed resonant detection is provided. The visible light illumination also leads to an increase of the electron mobility and, as a… Show more

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Cited by 274 publications
(160 citation statements)
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“…Apart from the frequency multiplication, graphene devices could be used in plasmon-based voltage-controlled sources and detectors of THz radiation. The physics of such devices has long been discussed in the literature 50,51,52,53,54,55 and the main ideas of 2D plasmon-assisted detection and generation of radiation have been confirmed in a number of experiments on conventional 2D electron systems 56,57,58,59 . Graphene has that advantage that the Fermi velocity of electrons in it is much higher than in other semiconductor materials, and its plasma frequency is widely tunable and lies in the THz range 45,46 .…”
Section: Introductionmentioning
confidence: 99%
“…Apart from the frequency multiplication, graphene devices could be used in plasmon-based voltage-controlled sources and detectors of THz radiation. The physics of such devices has long been discussed in the literature 50,51,52,53,54,55 and the main ideas of 2D plasmon-assisted detection and generation of radiation have been confirmed in a number of experiments on conventional 2D electron systems 56,57,58,59 . Graphene has that advantage that the Fermi velocity of electrons in it is much higher than in other semiconductor materials, and its plasma frequency is widely tunable and lies in the THz range 45,46 .…”
Section: Introductionmentioning
confidence: 99%
“…Two dimensional (2D) THz plasmons in silicon (Si) [4], III-V materials such as GaAs/AlGaAs [5] and GaN/AlGaN [6] heterostructures, and graphene [7,8] similarly are sub-wavelength compared to free-space electromagnetic waves, but have an additional degree of freedom due to the ability to control electron density, and thus the 2D plasma frequency, through a field effect. It is this latter capability that has generated interest in 2D plasmonic devices [9,10] such as THz detectors [11][12][13][14], mixers [15,16], emitters [17,18], and field enhancement structures [19].…”
mentioning
confidence: 99%
“…Finally there were two fit parameters only: ∆T e -the difference between temperatures of electrons and the lattice (4.2 K) and A -a scaling factor for the function (6). Results of both fitting procedures are shown in Fig.…”
Section: Amplitudementioning
confidence: 99%