We investigate temperature-dependent resonance fluorescence spectra obtained from a single selfassembled quantum dot. A decrease of the Mollow triplet sideband splitting is observed with increasing temperature, an effect we attribute to a phonon-induced renormalization of the driven dot Rabi frequency. We also present first evidence for a nonperturbative regime of phonon coupling, in which the expected linear increase in sideband linewidth as a function of temperature is canceled by the corresponding reduction in Rabi frequency. These results indicate that dephasing in semiconductor quantum dots may be less sensitive to changes in temperature than expected from a standard weak-coupling analysis of phonon effects. DOI: 10.1103/PhysRevLett.113.097401 PACS numbers: 78.67.Hc, 71.38.-k, 78.47.-p Self-assembled semiconductor quantum dots (QDs) provide a promising platform for quantum information processing using single spins [1,2] and photons [3][4][5][6]. Such applications require QD quantum coherence to be preserved on time scales sufficient for performing high fidelity quantum operations, and for emitted single photons to possess a large degree of indistinguishability [7][8][9]. Indistinguishable photons can be produced by s-shell resonant optical excitation of a single QD [10][11][12], wherein an electron-hole pair is created directly without any relaxation from higher states, which would otherwise cause inhomogeneous broadening in the QD emission spectrum. The coherence time (T 2 ) of such photons is able to approach the Fourier transform limit, T 2 ¼ 2T 1 (with T 1 the QD radiative lifetime) at low temperatures (∼4 K) and weak driving strengths [13].As the intensity of the pump laser increases, however, an additional power dependent dephasing contribution arises, even at low temperatures [14][15][16][17][18][19][20][21][22][23][24]. This is often termed excitation induced dephasing (EID), which commonly originates from deformation potential coupling of QD excitons to longitudinal acoustic (LA) phonons. As the driving strength increases, so does the energy splitting of the excitonic dressed states, and excitations are then able to scatter with the increased density of phonons around this energy scale in the bulk semiconductor lattice. Driving dependence is thus a pronounced characteristic of EID, as was observed in Refs. [14,15], where QD excitonic Rabi oscillations were measured via photocurrents, and in Refs. [16,17] through driven QD optical emission.Besides EID, another direct manifestation of the phonon influence on a driven dot can be found in the dependence of its properties on temperature. In fact, an idealized two-level system (e.g., an isolated atom) should not show any change in emission behavior with temperature over the usual experimental range, in contrast to the response to changes PRL 113,