Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface

Ab, McLean; Himpsel, F. J.

doi:10.1103/physrevb.40.8425

Cited by 30 publications

(7 citation statements)

References 25 publications

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“…Noting that the band gap of the GaAs bulk is about 0.9 eV, the 1.25 eV-peak in the latter IPS data 35 may correspond to the second peak in the former IPS data. 41 From our PBE (PBE+SOC) band structure, it is found that the positions of two lower unoccupied states at the Γ point are 1.12 (1.12) and 1.56 (1.45) eV above the bulk VBM, respectively, in reasonable agreement with previous IPS experiments 35,41 .…”

Section: Resultssupporting

confidence: 87%

“…Noting that the band gap of the GaAs bulk is about 0.9 eV, the 1.25 eV-peak in the latter IPS data 35 may correspond to the second peak in the former IPS data. 41 From our PBE (PBE+SOC) band structure, it is found that the positions Recently, it has become known that the asymmetric features of the surface states at surface atoms are crucial to determine the size of a Rashba spin splitting through SOC and electric dipole interaction. The former Hamiltonian is given by H SOC = 2 c 2 (∇V ×p) · S, where c is the velocity of light and V is a crystal potential, whereas the latter one represents the electrostatic energy of electric dipole moment in the surface electric field.…”

Section: Resultsmentioning

confidence: 99%

“…These dispersion features of the two surface states are generally similar to our band structure obtained using the PBE or PBE+SOC calculation. In addition, according to the inverse photoelectron spectroscopy (IPS) experiment of McLean and Himpsel 41 , the Bi monolayer on GaAs(110) produced two unoccupied surface states around 0.9 and 1.9 eV above the bulk valence-band maximum (VBM) at the Γ point.…”

Section: Resultsmentioning

confidence: 99%

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Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)

Kim

Cho

2015

Phys. Rev. B

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The search for one-dimensional electron systems with a giant Rashba-type spin splitting is of importance for the application of spin transport. Here we report, based on a first-principles density-functional theory calculation, that Bi zigzag chains formed on a heterogeneous GaAs(110) surface have a giant spin splitting of surface states. This giant spin splitting is revealed to originate from spin-orbit-coupling (SOC) and electric dipole interaction that are significantly enhanced by (i) the asymmetric surface charge distribution due to the strong SOC-induced hybridization of the Bi p x , p y , and p z orbitals and (ii) the large out-of-plane and in-plane potential gradients generated by two geometrically and electronically inequivalent Bi atoms bonding to Ga and As atoms. The results demonstrate an important implication of the in-plane and outof-plane asymmetry of the Bi/GaAs(110) interface system in producing the giant spin splitting with the in-plane and out-of-plane spin components.

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“…Noting that the band gap of the GaAs bulk is about 0.9 eV, the 1.25 eV-peak in the latter IPS data 35 may correspond to the second peak in the former IPS data. 41 From our PBE (PBE+SOC) band structure, it is found that the positions of two lower unoccupied states at the Γ point are 1.12 (1.12) and 1.56 (1.45) eV above the bulk VBM, respectively, in reasonable agreement with previous IPS experiments 35,41 .…”

Section: Resultssupporting

confidence: 87%

“…Noting that the band gap of the GaAs bulk is about 0.9 eV, the 1.25 eV-peak in the latter IPS data 35 may correspond to the second peak in the former IPS data. 41 From our PBE (PBE+SOC) band structure, it is found that the positions Recently, it has become known that the asymmetric features of the surface states at surface atoms are crucial to determine the size of a Rashba spin splitting through SOC and electric dipole interaction. The former Hamiltonian is given by H SOC = 2 c 2 (∇V ×p) · S, where c is the velocity of light and V is a crystal potential, whereas the latter one represents the electrostatic energy of electric dipole moment in the surface electric field.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)

Kim

Cho

2015

Phys. Rev. B

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“…Only data or calculations for GaP(110) [5]. In͞Si͑1 3 1͒R30 ± [6], and Bi͞GaAs(110) [7] have been reported.Here we present clear data on a different semiconductor surface. Both on metal and on semiconductor surfaces there is no information on the intrinsic width of the IR near the edges of the surface Brillouin zone a few eV above the vacuum level (see, e.g., Fig.…”

mentioning

confidence: 99%

“…Only data or calculations for GaP(110) [5]. In͞Si͑1 3 1͒R30 ± [6], and Bi͞GaAs(110) [7] have been reported.…”

mentioning

confidence: 99%

Dispersion and Intrinsic Width of Image Resonances Measured by Resonant Inelastic Electron Scattering: Theαphase of Pb/Ge(111)

et al. 1999

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Evidence of image states on semiconductor surfaces has been very scanty so far. We find that resonant scattering through image resonances totally dominates the electron energy loss spectra of the a phase of Pb/Ge(111) if the energy and the parallel momentum of the scattered electron are in the gap of the bulk bands projected onto the ͑1 3 1͒ surface Brillouin zone. The high energy and momentum resolution obtainable allows a detailed study of the interaction of these excited states with the substrate.[S0031-9007(98)08135-6] PACS numbers: 73.20.At, 79.20.Kz Surface electronic states are of great importance in the physics of solid surfaces. While most of the work is usually focused on filled states, the interest on empty states is increasing. The potential that an electron feels outside a solid surface has a long-range Coulombic tail (image potential) that gives rise to a particular series of empty surface states and surface resonances, the image states [1]. They are similar to the Rydberg states of an atom or molecule, and their wave functions extend tens to hundreds of angstroms from the surface into the vacuum. Because of their simplicity, they are of general interest since they provide a useful model to study the interaction of the electrons in excited surface states with the underlying substrate [2]. This interaction governs the lifetime of the states and therefore cross-section and branching ratios of all electronically induced adsorbate reaction at surfaces (e.g., desorption and dissociation processes) and influences the surface reactivity and the growth kinetics.In this Letter we show that resonant inelastic electron scattering through image states [3] (i.e., selective adsorption of low energy electrons into an image potential state followed by inelastic scattering and desorption) can provide important information on the interaction between these states and the substrate. It allows one to measure the momentum dispersion and the intrinsic width of imagepotential resonances of semiconductor surfaces in energy and momentum regions not reachable by other techniques and with high energy resolution together with good momentum resolution. To our knowledge this scattering mechanism has been observed on Ag surfaces only [3].Energy dispersions and lifetimes of the image states and image resonances (IR) have been studied mainly by inverse photoemission and by two-photon photoelectron spectroscopy on metal surfaces [4]. On the contrary, very little is known of these states on the semiconductor surfaces. Only data or calculations for GaP(110) [5]. In͞Si͑1 3 1͒R30 ± [6], and Bi͞GaAs(110) [7] have been reported.Here we present clear data on a different semiconductor surface. Both on metal and on semiconductor surfaces there is no information on the intrinsic width of the IR near the edges of the surface Brillouin zone a few eV above the vacuum level (see, e.g., Fig. 4 below) because these states are accessible only by inverse photo-emission with an energy resolution not better than 0.25 eV. We demonstrate that our techn...

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Reconstruction of the cleavage faces of tetrahedrally coordinated compound semiconductors

Duke

Advances in Solid State Physics

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Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface

Cited by 30 publications

References 25 publications

Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)

Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)

Dispersion and Intrinsic Width of Image Resonances Measured by Resonant Inelastic Electron Scattering: Theαphase of Pb/Ge(111)

Reconstruction of the cleavage faces of tetrahedrally coordinated compound semiconductors

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