Resonant ionization of laser desorbed silicon

Gibert, Titaïna; Gonthiez, T.

doi:10.1063/1.1567057

Cited by 4 publications

(8 citation statements)

References 18 publications

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“…The method was applied to the analysis of 19 single presolar silicon carbide grains (diameter 2.3-5.3 mm) recovered from the Murchison meteorite and pressed in a thin sheet of gold. 148 The 2s uncertainties of v15% (relative) for d 135 Ba, d 137 Ba and d 138 Ba (normalized on 136 Ba) compared well with results obtained previously using SIMS or TIMS.…”

Section: Analytical Methodologysupporting

confidence: 83%

“…262 Oxygen gas was leaked into the ion source chamber to maintain a stable beam (1610 211 A) of 142 CeO 1 ions. Data were normalized to 136 Ce: 142 Ce 0.016 88 using the exponential law and corrections were made for isobaric interferences from CeO, 138 LaO, 142 NdO and 141 PrO. A 138 Ce: 142 Ce ratio of 0.022 580 0¡0.000 001 9 (2s) was measured for Johnson-Matthey JMC304 (high purity CeO reagent).…”

Section: Analytical Methodologymentioning

confidence: 99%

“…The relative importance of the neutral and ionized Si atoms desorbed by laser irradiation was used to investigate the redistribution of photon energy in the solid. 136 In principle, this redistribution can lead to melting of the material in the subsurface over a depth corresponding to the diffusion length, or to the direct ejection of particles through distortion of the electronic structure of the sample components. The desorption was achieved with a frequency tripled Nd : YAG laser beam (l ~355 nm, t ~5 ns, repetition rate 10 Hz) in the fluence range between 85 and 165 mJ cm 22 .…”

Section: Fundamental Studiesmentioning

confidence: 99%

See 2 more Smart Citations

Atomic spectrometry update. Atomic mass spectrometry

Bacon¹,

Greenwood²,

Vaeck

et al. 2004

J. Anal. At. Spectrom.

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Section: Analytical Methodologysupporting

confidence: 83%

Section: Analytical Methodologymentioning

confidence: 99%

Section: Fundamental Studiesmentioning

confidence: 99%

See 1 more Smart Citation

Atomic spectrometry update. Atomic mass spectrometry

Bacon¹,

Greenwood²,

Vaeck

et al. 2004

J. Anal. At. Spectrom.

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“…The multi-pulse damage threshold determined in [14] is well consistent with that evaluated here. Similar incubation effect in silicon was observed recently with ns laser pulses [8,15]. The precise nature of the incubation effect is not clear (it can be, e.g., due to chemical modification, mechanical stress, defect accumulation [14,15]) and needs further investigation.…”

Section: Monatomic Simentioning

confidence: 63%

Silicon clusters produced by femtosecond laser ablation: non-thermal emission and gas-phase condensation

2004

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Neutral silicon clusters Sin (up to n = 7) and their cations Si + n (up to n = 10) have been produced by femtosecond laser ablation of bulk silicon in vacuum and investigated using time-offlight mass spectrometry. Two populations of the Si + n clusters with different velocity and abundance distributions in the ablation plume have been clearly distinguished. Possible mechanisms of cluster formation (Coulomb explosion, gas-phase condensation, phase explosion) are discussed.PACS: 52.38. MF; 61.46.+w; 79.20.Ds Femtosecond laser ablation is a rapidly developing technique offering new possibilities in various applications. The fundamental mechanisms that lead to material removal are, however, still poorly understood. The interaction of fs laser pulses with silicon is an example of a complex interplay of thermal and ultrafast, nonthermal processes involved to ablation [1,2,3]. Studies of composition and expansion dynamics of the laser-induced plume can provide a considerable insight into the ablation mechanisms. Several recent experiments on this subject [2,4,5,6] were mainly devoted to the atomic component of the plume though an observation of small silicon clusters was also mentioned [2]. Little is known about silicon cluster formation under ablation with short laser pulses. With ns pulses, low-fluence desorption of Si dimers [7] and small neutral Si n clusters [8] were observed. Desorption of small clusters from both crystalline and nanostructured Si surfaces was induced by using high-energy (6.4 eV) photons [9]. Multiple-charged cluster ions were formed in ps-laser stimulated field evaporation [10]. Recently we reported the first results on the observation of neutral and cationic clusters under femtosecond laser ablation of silicon [11]. In this work, we analyze mechanisms of clusters formation based on measurements of the abundance and velocity distributions. I. EXPERIMENTThe experiments were performed with Si[100] surface under ultrahigh vacuum conditions (∼ 10 −10 mbar). The Si target was irradiated at a 45˚incidence angle using a Ti:sapphire laser (Mai-Tai coupled with a TSA amplifier, Spectra Physics, 80 fs pulse duration, 10 Hz rep- * Fax: +7 3832 343480, Tel.: +7 3832 391045; Electronic address: bulgakov@itp.nsc.ru † Electronic address: ozerov@crmcn.univ-mrs.fr ‡ Electronic address: marine@crmcn.univ-mrs.fr etition rate, up to 30 mJ energy per pulse) operating at 800 nm. A part of the laser beam was selected by an aperture to provide a nearly uniform intensity distribution over the irradiated spot. The target was rotated/translated during measurements to avoid considerable cratering. Some experiments were performed with the fixed target in order to investigate the effect of accumulation of laser pulses at the same spot. The fluence on the target was varied in the range 80-800 mJ/cm 2 . The abundance distributions of neutral and positively charged particles in the laser-ablation plume were studied using a reflectron time-of-flight mass spectrometer. The neutral particles were analyzed using electron impact...

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“…One of the most developed was the injection of ultra-short bursts in RF accelerators. Such electron bursts have also been used in the eighties for diagnostics of RF plasma sheaths in 13.56 MHz capacitive low pressure discharges, where the injection time within an RF period revealed the time behaviour of the RF sheaths [21][22][23][24][25][26]. This section concerns the first step of the development of a similar tool for the diagnosis of the near exhaust plasma of a Hall thruster and presents a characterization of the production of photo induced electron bursts.…”

Section: Characterization Of Laser Induced Photoelectron Bursts From ...mentioning

confidence: 99%

Laser injection of ultra-short electron bursts for the diagnosis of Hall thruster plasma

Albarède

Gibert

Lazurenko³

et al. 2006

Plasma Sources Sci. Technol.

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The present developments of Hall thrusters for satellite control and space mission technologies represent a new step towards their routine use in place of conventional thermal thrusters. In spite of their long R and D history, the complex physics of the E × B discharge at work in these structures has prevented, up to now, the availability of predictive simulations. The electron transport in the accelerating layers of these thrusters is one of the remaining challenges in this direction. From the experimental point of view, any diagnostics of electron transport and electric field in this critical layer would be welcome for comparison with code predictions. Appropriate diagnostics are difficult, due to the very aggressive local plasma conditions. This paper presents the first step in the development of a new tool for characterization of the plasma electric field in the very near exhaust thruster plume and comparison with simulation code predictions.The main idea is to use very short bursts of electrons, probing local electron dynamics in this critical plume area. Such bursts can be obtained through photoelectric emission induced by a UV pulsed laser beam on a convenient target. A specific study, devoted to the characterization of the electron burst emission, is presented in the first section of the paper; the implementation and testing of the injection of electrons in the critical layer of Hall thruster plasma is described in the second section. The design and testing of a fast and sensitive system for characterizing the transport of injected bursts will be the next step of this program. It requires a preliminary evaluation of electron trajectories which was achieved by using simulation code. Simulation data are presented in the last section of the paper, with the full diagnostic design to be tested in the near future, when runs will be available in the renewed PIVOINE facility. The same electron burst injection could also be a valuable input in the present discussion on the physics of the 5-10 MHz instability observed in almost all Hall thrusters.

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Resonant ionization of laser desorbed silicon

Cited by 4 publications

References 18 publications

Atomic spectrometry update. Atomic mass spectrometry

Atomic spectrometry update. Atomic mass spectrometry

Silicon clusters produced by femtosecond laser ablation: non-thermal emission and gas-phase condensation

Laser injection of ultra-short electron bursts for the diagnosis of Hall thruster plasma

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