Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures

Méndez, E. E.; Esaki, L.; Wang, W. I.

doi:10.1103/physrevb.33.2893

Cited by 196 publications

(67 citation statements)

References 12 publications

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“…Для определения положения уровня Ферми относи-тельно уровней E e1 и E h1 и концентраций 2D носителей в ККЯ запишем условие электронейтральности n 2D = p 2D в виде (без учета перетекания электронов из подложки из-за большой ширины барьера [28])…”

Section: энергетический спектр исследованных структур с ккя Alsb/inasunclassified

“…Действительно, при ориентации B S квантование по Ландау 2D элек-тронных состояний в КЯ InAs отсутствует, и наблюда-емые осцилляции ПМС в полях до 12 Тл можно объ-яснить осцилляциями Шубникова-де-Гааза для 3D элек- Линейное возрастание неосциллирующего фона маг-нитосопротивления R/R(0) на рис. 2 при B S обус-ловлено изменением характера туннелирования при I ⊥ B электронов подложки с уровня Ферми через электронно-дырочные 2D состояния на гетерогранице II типа в квантовой яме и в буферном слое, спектры которых E(k ) смещаются в магнитном поле друг отно-сительно друга на k в плоскости гетерограниц [28]. На опыте такое смещение приводит к уменьшению вероятности резонансного туннелирования через гетеро- Рис.…”

Section: экспериментальные результаты и их обсуждениеunclassified

“…При этом вертикальный ток протекает через подложку, изменяясь в магнитном поле аналогич-но продольному магнитосопротивлению для объемных электронов. В осцилляциях Шубникова-де-Гааза в обла-сти спин-расщепленного уровня Ландау N = 0 спиновый уровень 0 − обычно не проявляется из-за отсутствия рассеяния электронов с переворотом спина [28]. Этот вывод позволяет рассматривать слабые осцилляции вер-тикального кондактанса G(B)/G(0) при B ⊥ S в полях B > 5 Tл как результат резонансного туннелирования электронов через 2D состояния в КЯ InAs, квантованные в магнитном поле [18,19].…”

Section: экспериментальные результаты и их обсуждениеunclassified

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Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

Mikhaĭlova¹,

Berezovets

Parfen’ev³

et al. 2017

Физика И Техника Полупроводников

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Вертикальный транспорт исследован в гетеропереходах II типа с двухбарьерной квантовой ямой AlSb/InAs/GaSb/AlSb, выращенной методом МОГФЭ (MOVPE) на подложке n-InAs(100), в квантующих магнитных полях до B = 14 Тл при низких температурах, T = 1.5 и 4.2 K. Ширина квантовых ям выбиралась из условия получения инвертированной зонной структуры. Измерения осцилляций Шубникова−де-Гааза проводились при двух ориентациях магнитного поля (перпендикулярной и параллельной) относи-тельно плоскости структуры. Установлено, что проводимость в исследуемой структуре осуществлялась как трехмерными (3D) электронами подложки, так и двумерными (2D) электронами квантовой ямы InAs в условиях квантового предела для объемных электронов (B > 5 Tл). Определены концентрации электронов в подложке и в квантовой яме InAs, а также g-фактор для трехмерных носителей из спинового расщепления нулевого уровня Ландау. Показано, что максимумы кондактанса в магнитном поле, перпендикулярном плоскости структуры и параллельном току через структуру, в полях B > 9 Тл соответствуют резонансному туннелированию 3D электронов из подложки-эмиттера в квантовую яму InAs через 2D электронные состояния уровней Ландау.

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Section: энергетический спектр исследованных структур с ккя Alsb/inasunclassified

Section: экспериментальные результаты и их обсуждениеunclassified

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Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

Mikhaĭlova¹,

Berezovets

Parfen’ev³

et al. 2017

Физика И Техника Полупроводников

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“…for an L = 50Å GaAs-Ga 0.65 Al 0. parison with experimental measurements involving transitions between consecutive Landau levels, whereas the m ↑,↓ 2D 2D cyclotron effective mass is appropriate for experiments associated with, for instance, resonant magnetotunneling in double barrier heterostructures [26]. Results shown in Figure 1 correspond to calculations associated to the electronic levels of the first m = 1 subband of Landau states.…”

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confidence: 99%

Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields

Dios-Leyva¹,

Porras‐Montenegro²,

Brandi³

et al. 2006

Braz. J. Phys.

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The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the nonparabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g -factor in semiconductor GaAs-Ga 1−x Al x As quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga 1−x Al x As quantum wells. Results for the electron cyclotron effective mass and g -factor are found in quite good agreement with experimental data.Keywords: g-factor; Cyclotron effective mass; Quantum wells; Magnetic fieldThe understanding of the physics of semiconductor single and multiple quantum wells (QWs), quantum-well wires (QWWs), quantum dots (QDs), and superlattices (SLs) has been of great interest, and several studies have been performed to elucidate the physical properties of these systems [1][2][3][4][5][6]. The possible use of electron spins in the architecture of a solid-state based quantum computer has raised special attention in the study of the behavior of the electron spin coupled with an external magnetic field. In the single qubit operation it is of fundamental importance to have pure spin states in order to guarantee that no losses occur when the spins transport information [1]. This goal may be achieved by manipulating the electron g-factor in semiconductor heterostrucures and designing appropriate external gate control devices. The cyclotron effective mass and electronic g-factor are of importance in possible applications and in the interpretation of experimental data in specific research fields such as magneto-optical and magneto-transport studies, optically detected nuclear-resonance experiments, spin electronics and quantum beats measurements, and in the fractional and integer quantum Hall effects [2-6].The appropriate calculation of the electron g-factor and cyclotron effective mass depends on the detailed understanding of the interaction between the externally applied magnetic field and electronic states of the semiconductor heterostructure. Techniques such as electron spin resonance, Hanle effect, spin quantum beats, spin flip Raman scattering experiments, and capacitance and energy spectroscopies [4][5][6][7][8][9][10] have been used to measure the electron g-factor in semiconductor systems. Lattice effects on the orbital contribution, quantumconfinement, and application of hydrostatic-pressure and external electric/magnetic fields may considerably modify the conduction-electron g-factor, in both magnitude and sign, in different semiconductor heterostructures. On the other hand, experimental measurements of both the Landé g-factor and cyclotron effective mass provide an excellent tool for testing theoretical predictions of band-structure electronic calculations in low-dimensional semiconductor heterostructures. In that respect, in this study we present a theoretical model which is used to give a...

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“…Inherent interest in the tunneling process led subsequently to extensive studies of the coherent versus incoherent nature of the process itself [6] and the dynamic behaviour of the charge built-up [7]. More recently, resonant tunneling was also applied to structures under magnetic fields both to observe electron transport through Landau levels [8] and to deduce dispersion relations in the band structure [9]. Tunneling in zero-dimensional systems was also pursued when such systems became realized later [10].…”

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confidence: 99%

Road to Quantum Boxes

Chang

1996

Acta Phys. Pol. A

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Quantum wells and superlattices have evolved over the last two decades to become a prominent multi-disciplinary field in condensed matter science. From the first observation of resonant tunneling to the recent realization of the quantum box, in this work we provide a summary description of the historical development of the field, known today as quantum structures. The focus is on the physics aspect with emphasis on important experimental observations that collectively define the field and set its direction of development.PACS numbers: 73.20. Dx, It has been more than two decades since the superlattices and quantum wells were first proposed and realized. This achievement has dramatically changed the landscape of semiconductor research. Indeed, it has opened up a new field in which materials, physics and electronics are pursued in artificially synthesized structures on the scale of atomic dimensions [1]. Quantum states are created with prescribed conflgurations, leading to unprecedented transport, optical and magnetic properties. We show in Table I the multidisciplinary nature of the field, ranging from the preparation and characterization of the structures to the exploration and investigation of new physical phenomena and device applications. Over the years, the field has experienced tremendous expansion and growth and has developed to become a dominant theme in condensed matter science, known today as quantum structures or artificially structured materials or, loosely, nanostructures.The major focus of our interest in quantum structures has been on their physics aspects. This focus will remain in this work as we attempt to look back and give a brief account of its historical development. In Table II some of the important events are shown in chronological order with emphasis on experimental observations. The list is no doubt incomplete in view of the vast, worldwide effort in this field of research and the very large number of reports in the literature. In this table a few items in the development of electronic and optoelectronic devices are also included.In the early 1970's, amid an environment of Skepticism, we started our experimental effort to fabricate ultrathin semiconductor layers in pursuance of the quantum size effect. Guided by the theoretical prediction of a negative-resistance [2], (603)

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Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures

Cited by 196 publications

References 12 publications

Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields

Road to Quantum Boxes

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