Resonant Raman scattering in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">I</mml:mi><mml:mi mathvariant="normal">n</mml:mi><mml:mi mathvariant="normal">P</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">I</mml:mi><mml:mi mathvariant="normal">n</mml:mi></mml:mrow><mml:mrow><mml:mn>0.48</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow>

Sirenko, A. A.; Zundel, M. K.; Ruf, T.; Eberl, K.; Cardona, M.

doi:10.1103/physrevb.58.12633

Cited by 13 publications

(16 citation statements)

References 31 publications

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“…38 Our experimental results, namely, the dependence of the phonon resonance intensities on the applied bias and the strongly variable ratio of the 1LO and 2LO resonance intensities depending on spectral position within the PL band, allow us to rule out resonant Raman scattering as the process responsible for the phonon resonances. This point is further supported by the long decay time of the QD emission at the phonon resonances and the strong temperature dependence of the resonance intensities, discussed below.…”

Section: B Physical Mechanismmentioning

confidence: 93%

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

Ignatiev

Kozin

Davydov³

et al. 2001

Phys. Rev. B

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Phonon resonances observed in the photoluminescence ͑PL͒ spectra of InP and In 0.35 Ga 0.65 As selfassembled quantum dots ͑QD's͒ in an external electric field are studied in detail. The resonances are shown to arise from fast phonon-assisted relaxation of hot carriers, and to become observable when the PL is quenched by nonradiative losses from excited states. A simple model is developed that considers tunneling of the carriers from the QD's into the barrier layer as the main process responsible for PL quenching in the presence of an electric field. From this model, the depth of the potential well for holes is estimated to be 10-20 meV for the InP QD's. The PL kinetics measurement is performed with a time resolution of 6 ps. Clear evidence of surprisingly fast carrier relaxation with emission of high-energy acoustic phonons is found. Further acceleration of the carrier relaxation is observed under strong optical pumping. We consider this effect to be caused by Auger-like carrier-carrier scattering processes. Acceleration of the relaxation observed at elevated temperatures is ascribed to stimulated phonon emission.

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Section: B Physical Mechanismmentioning

confidence: 93%

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

Ignatiev

Kozin

Davydov³

et al. 2001

Phys. Rev. B

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“…We attribute these narrow lines to acoustic-phonon-assisted electron spin-flip processes. [4][5][6][7] The full width at half-maximum ͑FWHM͒ of the spin-flip lines, ␦, after deconvolution with respect to the instrumental response is about 0.5 cm Ϫ1 . This value neither changes with magnetic field nor with temperature up to 280 K. The Raman shift of the electron spin-flip line, ⌬ e , is directly proportional to B.…”

Section: B Spin-flip and Acoustic-phonon Raman Spectra At Bmentioning

confidence: 99%

“…In comparison to other techniques, such as polarized exciton luminescence, 10 optically detected spin resonance, 11 or Hanle effect measurements, 12,13 which only yield the g factors of either excitons, electrons, or holes, SFRS allows one to determine all these quantities in a single experiment. 4,7 In the present work SFRS is applied to CdS quantum dots ͑QD's͒ embedded in a glass matrix. This system is currently of great interest because of its unique electronic and optical properties, which are modified by size quantization of the electronic states.…”

Section: Introductionmentioning

confidence: 99%

Spin-flip and acoustic-phonon Raman scattering in CdS nanocrystals

et al. 1998

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We report on spin-flip Raman scattering and on Raman scattering by acoustic phonons in CdS nanocrystals embedded in a glass matrix. We discuss both the spin-flip and the acoustic-phonon Raman spectra on the basis of the interaction of size-quantized electronic excitations with nonconfined acoustic vibrations. The polarization of spin-flip Raman scattering in the Faraday and Voigt configurations is analyzed in comparison with that for bulk CdS. The effective electron g factor has been measured as a function of the quantum dot size.

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“…However, up to now the published Raman studies devoted to self-assembled QD concern only optical phonons in connection with strain, alloying and vibrational confinement effects. [3][4][5][6][7] In contrast, Raman scattering by both optical [8][9][10][11] and acoustical phonons [12][13][14] has been investigated in nanocrystals embedded in solid matrices ͑semiconductor doped glasses͒ and in colloidal nanoparticles mainly of II-VI compounds. There, confined acoustic phonons were observed and their frequency dependence on QD size well established.…”

mentioning

confidence: 99%

Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots

et al. 2000

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Single layers of self-assembled InAs/InP quantum dots ͑QD͒ are studied by Raman scattering excited in resonance with the confined E 1 transition of InAs. Intense periodic oscillations are observed in the lowfrequency Stokes and anti-Stokes spectra of both capped and uncapped QD. By using a controlled chemical etching, we progressively reduced the thickness of the InP cap layer. We found that the oscillations period is determined by the sample surface-QD layer separation and by the sound velocity of the longitudinal acoustic phonons. A model based on the interaction between confined electronic states and standing sound waves due to the sample surface showed a reasonable agreement with the measurements. The dependence of the lowfrequency scattering on QD size is discussed.Recent progress in controlling the growth of highly strained semiconductor layers has allowed the appearance of a new class of quantum systems referred to as self-assembled QD. The interest lies in the potential applications in optoelectronic devices, especially in infrared laser emitters, and in the fundamental physics related to quantum confinement. In particular, quantum confinement strongly affects the electron-phonon interaction and subsequent effects such as energy relaxation dynamics and homogeneous broadening of interband transitions. 1,2 Investigations of the optical and acoustical phonons and their coupling to electrons have been carried out in zero-dimensional systems using Raman spectroscopy. However, up to now the published Raman studies devoted to self-assembled QD concern only optical phonons in connection with strain, alloying and vibrational confinement effects. 3-7 In contrast, Raman scattering by both optical 8-11 and acoustical phonons 12-14 has been investigated in nanocrystals embedded in solid matrices ͑semiconductor doped glasses͒ and in colloidal nanoparticles mainly of II-VI compounds. There, confined acoustic phonons were observed and their frequency dependence on QD size well established. 12 In this paper we report on Raman scattering by acoustic phonons in InAs/InP self-assembled QD. Intense periodic oscillations of the scattered intensity are observed for resonant excitation with the confined E 1 transition of InAs. To the best of our knowledge, such features were not reported before for QD structures. Evolution of the oscillations period and intensity with separation between the free surface of the sample and the QD layer is pointed out. Calculations based on the interaction of confined electronic states with acoustic phonons are compared to the experimental data. We found that the oscillatory behavior of the low-frequency Raman scattering is possibly due to the proximity of the sample surface acting as a sound wave mirror.Two samples ͑labeled A and B͒ of buried nm-sized InAs QD were grown on InP ͑001͒ by gas source molecular beam epitaxy. The QD are formed with a 2.1 monolayer ͑ML͒ InAs deposition. The average QD dimensions are as follows: height hϭ5 nm and width wϭ70 nm. The QD are capped by a InP layer: 15 nm for ...

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Resonant Raman scattering inInP/In0.48Ga

Cited by 13 publications

References 31 publications

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

Spin-flip and acoustic-phonon Raman scattering in CdS nanocrystals

Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots

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