Resonant States in Strained Semiconductors

Odnoblyudov, M. A.; Chistyakov, V. M.; Yassievich, I. N.; Kagan, M. S.

doi:10.1002/(sici)1521-3951(199812)210:2<873::aid-pssb873>3.0.co;2-5

Cited by 12 publications

(13 citation statements)

References 5 publications

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“…17, 18 However, if a resonant state exists with energy less than ប 0 , then under an applied electric field a carrier will charge the resonant state before its energy reaches ប 0 . In our earlier letter 5 we have proved that such process provides a new mechanism of carrier population inversion, which explains the origin of far-infrared lasing from strained p-Ge. 4 The detailed analysis, which was not given in Ref.…”

Section: Kinetics Of Resonant Statesmentioning

confidence: 81%

“…We will first outline briefly the model studied in Ref. 5. It includes a drain D at E k ϭប 0 , which describes the process of removal of holes in the energy region E k уប 0 due to emission of optical phonons, and a source S at small k within the energy interval between zero and ⑀ 0 Ӷប 0 , which presents the generation of holes removed by drain.…”

Section: Kinetics Of Resonant Statesmentioning

confidence: 99%

“…Two questions of fundamental importance then arise: the characteristic features of the resonant state and the mechanism of its population inversion. In our recent letter, 5 we have proved without computational details that the inversion of carrier population is due to the coherent capture-and-emission process by resonant states. Such details will be provided in the present paper.…”

Section: Introductionmentioning

confidence: 98%

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Resonant states induced by shallow acceptors in uniaxially strained semiconductors

Odnoblyudov

Yassievich

Chistyakov³

et al. 2000

Phys. Rev. B

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We present a detailed theoretical investigation of resonant states induced by shallow acceptors in uniaxially strained semiconductors. By applying Dirac's approach and using the Coulomb potential of an acceptor impurity, we have obtained the amplitude of resonant scattering, the probability of coherent capture and emission of holes by resonant state, and the characteristic features of the resonant state. The modified dispersion law and density-of-states of valence band by the resonant states have also been derived. The energy dependence of optical transition probability between resonant and localized impurity state have been calculated. The theoretical investigation of a new mechanism for carrier population inversion in strained semiconductors under an electric field has been presented. It has been shown that the mechanism is the result of a coherent captureemission type inelastic scattering of holes by resonant states. The calculation based on our theory for uniaxially strained p-Ge explains the recently observed lasing phenomena in THz frequency region. PRB 62 ODNOBLYUDOV, YASSIEVICH, CHISTYAKOV, AND CHAO

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Section: Kinetics Of Resonant Statesmentioning

confidence: 81%

Section: Kinetics Of Resonant Statesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Resonant states induced by shallow acceptors in uniaxially strained semiconductors

Odnoblyudov

Yassievich

Chistyakov³

et al. 2000

Phys. Rev. B

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“…We will demonstrate in quantitative details that our suggested mechanism is realistic. Based on a uniaxially strained p-Ge in which shallow acceptors induce resonant states [4,5], a terahertz laser has been fabricated recently [6], and the radiation emission is due to optical transitions between the resonant states and the localized acceptor (Ga) states. Up to now, the mechanism of lasing has remained a puzzle.…”

mentioning

confidence: 99%

“…In p-Ge, t r is shorter than t k , and t r ഠ 2 3 10 26 s [5]. The value ofh͞G was obtained earlier [4,5] ash͞G ഠ 2 3 10 213 s, and our numerical calculation (shown later) gives the transient time t E ഠ 10 211 s for reaching stationary nonequilibrium distribution. Thus, the necessary condition for lasing is satisfied, and we neglect the radiation transition processes in the kinetic equations for f k and for the population of the impurity state f r .…”

mentioning

confidence: 99%

Population Inversion Induced by Resonant States in Semiconductors

et al. 1999

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We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.Comment: 4 pages, 3 figures submitted to Phys.Rev.Letter

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THz lasing of SiGe/Si quantum‐well structures due to shallow acceptors

Kagan

Алтухов

Chirkova

et al. 2002

Physica Status Solidi (b)

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An intense THz emission was observed from strained SiGe/Si quantum-well structures under strong pulsed electric field. The p-type structures were MBE-grown on n-type Si substrates and δ-doped with boron. Lines with wavelengths near 100 microns were observed in the emission spectrum. The modal structure in the spectrum gave evidence for the stimulated nature of the emission. The origin of the THz emission was attributed to intra-centre optical transitions between resonant and localized boron levels.

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Resonant States in Strained Semiconductors

Cited by 12 publications

References 5 publications

Resonant states induced by shallow acceptors in uniaxially strained semiconductors

Resonant states induced by shallow acceptors in uniaxially strained semiconductors

Population Inversion Induced by Resonant States in Semiconductors

THz lasing of SiGe/Si quantum‐well structures due to shallow acceptors

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