Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Zhao, Fan; Zhu, Changju; Guo, Weiqi; Cong, Jason; Tee, Clarence Augustine Th; Song, Le; Zheng, Yelong

doi:10.3390/electronics8101164

Cited by 16 publications

(8 citation statements)

References 28 publications

(47 reference statements)

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“…Theoretical studies suggest that oscillators based on a stack of graphene/hexagonal boron nitride/graphene could operate at a fundamental oscillation frequency of hundreds of GHz at similar output power as existing RTDs [130]. Other simulation work even predicts emission at several THz if classical RTDs are coupled to graphene plasmons in a transmission line arrangement [131]. While RTDs and other devices with negative differential resistance are being fabricated with van der Waals materials [132,133], we are not aware of any reports about experimental studies of THz emitters based on such devices.…”

Section: Resonant Tunneling Diodesmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

191

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In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

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Section: Resonant Tunneling Diodesmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

191

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“…The NDR concept has been researched for nearly 100 years [22,23,[26][27][28]. An NDR device is characterized by the negative slope of I-V curve.…”

Section: Cmos Ndrmentioning

confidence: 99%

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

Zhao

Cong

Guo

et al. 2020

IEICE Electron. Express

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Computer-science-oriented and neuroscience-oriented are two general approaches to developing artificial general intelligence (AGI). In this study, a silicon neuron transistor is developed using the neuroscience approach for AGI applications. Neuronal behavior ("weighted sum and threshold" function) is based on the complementary metal-oxidesemiconductor (CMOS) negative differential resistance (NDR) theory. The neuron transistor is implemented by the UMC 180-nm commercial standard CMOS process, which is beneficial to implement an entire neural network or integrate with other CMOS circuits on the same chip. The neuron transistor is composed of three inputs Vg1, Vg2, and Vg3 and one control terminal Vcon, Vb(load), and Vb(driver). The width of each input is 1.8 μm, and the inputs have 1, 2, and 4 fingers, that is, the weight ratio is 1:2:4. Vb(load) and Vb(driver) enable a neuron transistor to function more closely resembles a real biological neuron, with improved sensitivity and less complicacy compared to a traditional artificial neural network. The neuron MOS transistor was measured at the maximum frequency of 10 kHz. It had extremely low power consumption of <10-4 μW and a miniscule footprint 30 × 15 μm 2. As the process feature size decreases, the chip's operating frequency will increase by one order of magnitude, and its power consumption and footprint will decrease.

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“…The THz detector performance was modelled using Dyakonov-Shur plasma wave theory. Plasma waves at the insulator-metal interface can not only achieve THz wave detection but also achieve power amplification [11,30], where ∆U is the measured voltage from the SR830 at the amplifier output terminal, as shown in Figure 3a [31], and there is a positive correlation between ∆U and received power. Plasma waves are usually overdamped in CMOS structures [32,33], hence we propose a non-resonant broadband detector [34].…”

Section: Terahertz Chip Measurementsmentioning

confidence: 99%

“…Terahertz radiation ranges from 3 mm to 30 µm with corresponding frequencies of 0.1-10 THz [5][6][7][8][9], which penetrate plastics, paper, and wood. The THz region is sometimes called the "THz Gap" [10][11][12] because optical and microwave theory do not fully apply for this frequency range.…”

Section: Introductionmentioning

confidence: 99%

On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens

et al. 2020

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This study proposes an on-chip terahertz (THz) detector designed with on-chip inset-feed rectangular patch antenna and catadioptric lens. The detector incorporates a dual antenna and dual NMOSFET structure. Radiation efficiency of the antenna reached 89.4% with 6.89 dB gain by optimizing the antenna inset-feed and micro-strip line sizes. Simulated impedance was 85.55 − j19.81 Ω, and the impedance of the antenna with the ZEONEX horn-like catadioptric lens was 117.03 − j20.28 Ω. Maximum analyzed gain of two on-chip antennas with catadioptric lens was 17.14 dB resonating at 267 GHz. Maximum experimental gain of two on-chip patch antennas was 4.5 dB at 260 GHz, increasing to 10.67 dB at 250 GHz with the catadioptric lens. The proposed on-chip rectangular inset-feed patch antenna has a simple structure, compatible with CMOS processing and easily implemented. The horn-like catadioptric lens was integrated into the front end of the detector chip and hence is easily molded and manufactured, and it effectively reduced terahertz power absorption by the chip substrate. This greatly improved the detector responsivity and provided very high gain. Corresponding detector voltage responsivity with and without the lens was 95.67 kV/W with NEP = 12.8 pW/Hz0.5 at 250 GHz, and 19.2 kV/W with NEP = 67.2 pW/Hz0.5 at 260 GHz, respectively.

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Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Cited by 16 publications

References 28 publications

Roadmap of Terahertz Imaging 2021

Roadmap of Terahertz Imaging 2021

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens

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