Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells

Abstract

We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitter regions are comprised of the lattice-matched quaternary semiconductor Ga0.64In0.36As0.33Sb0.67. Photoluminescence emission spectra reveal a direct bandgap semiconductor with a bandgap energy of Eg≈0.37 eV, which corresponds to a cut-off wavelength of λ≈3.3 μm. The composition-dependent bandgap energy is found to follow Shim’s model. At room temperature, we observe resonance current densities of jres=0.143 kA cm−2 with peak-to-valley current ratios of up to PVCR=6.2. At cryogenic temperatures T<50 K, the peak-to-valley current ratio increases up to PVCR=16.

The optimum configuration design of a nanostructured thermoelectric device with resonance tunneling

“…A resonant tunneling state also occurs within the forbidden gap of the electron transmittance and creates a giant thermoelectric effect in p and n doped graphene superlattice heterostructures [32]. Castro et al experimentally studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes, where a significant resonance current density is observed at room temperature [33]. The phonon scatering and the preparation of thermoelectric material strongly affect the performance of devices.…”

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

“…This enables, for instance, our discussion of the role of minority carriers and the optimization of different operating regimes. In addition, the robust resonant transport response of this kind of system has been proven in a wide temperature range [ 24 ]. In order to enhance the practical relevance of our findings, the discussion presented here has been focused solely on the room temperature operation of these devices, and all measurements were carried out in normal atmosphere.…”

Optical Mapping of Nonequilibrium Charge Carriers

“…Significant progress has been achieved in the electronic structure engineering of nanoscopic systems, allowing for a thorough characterization of the charge carrier dynamics and correlation with the optical response. This is particularly crucial in semiconductor heterostructures like resonant tunneling diodes (RTDs) − where challenging questions still pervade the physics of carrier excitation, transport, relaxation, and recombination. − In particular, mapping the thermalization gradient along the transport path and how it is affected by external factors is still a relevant topic to be characterized and understood, and optical tools are well suited for this purpose. , …”

“…This is particularly crucial in semiconductor heterostruc-tures like resonant tunneling diodes (RTDs) [1][2][3][4][5] where challenging questions still pervade the physics of carrier excitation, transport, relaxation, and recombination. [6][7][8][9][10] In particular, mapping the thermalization gradient along the transport path and how it is affected by external factors is still a relevant topic to be characterized and understood, and optical tools are well suited for that purpose.…”