Resonant X-ray Raman scattering for Al, Si and their oxides

Abstract

High-resolution measurements of the resonant X-ray Raman scattering (RRS) of Al and Si and their oxides were performed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France, using a von Hamos Bragg-type curved crystal spectrometer. To probe the influence of chemical effects on the RRS X-ray spectra, Al 2 O 3 and SiO 2 samples were also investigated. The X-ray RRS spectra were measured at different photon beam energies tuned below the K-absorption edge. The measured spectra are compared to results of RRS calculations based on the second-order perturbation theory within the Kramers-Heisenberg approach.

The influence of X-ray resonant Raman scattering effects on the detection of copper(II) tetrasulphonated phthalocyanine (CuTSPc) thin-films deposited on gold electrodes

“…The practical importance of the XRRS phenomenon has been recognized in the determination of ultra-trace impurities on substrates, such as the detection of low Z elements (e.g. Al, oxides) in silicon wafers by TXRF [7][8][9][10], Pt in ancient gold [11] and Ni in copper substrates [12]. In these cases the energies of the fluorescence lines of the impurities are just below the absorption edge of the main substrate or matrix element.…”