2004
DOI: 10.1063/1.1801164
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Resonantly pumped optical pumping injection cavity lasers

Abstract: An optical parametric oscillator is tuned to the resonance wavelength of the etalon in an optical pumping injection cavity (OPIC) laser with a type-II "W" active region, thereby minimizing the threshold pump intensity and maximizing the output slope efficiency. Previous OPIC experiments employed fixed-wavelength sources with only limited tuning available by adjusting the incident angle. Low threshold pump intensities of 330 W / cm 2 at 100 K and 14 kW/ cm 2 at 300 K (where the output wavelength is 3200 nm) wer… Show more

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Cited by 7 publications
(6 citation statements)
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“…31 ͑The absorbance correction is included in determining the external differential quantum efficiencies, d .͒ Parabolic fits to the thresholds yield the minimum values along with an independent determination of the resonant pump wavelengths. As in previous studies employing tuned OPO excitation, 17,31 to within experimental error the minimum I th and maximum d occur at the same R ͑which falls in between the integer nanometer OPO wavelength values employed to acquire the data͒.…”
Section: Experimental Efficiencies and Thresholdssupporting
confidence: 70%
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“…31 ͑The absorbance correction is included in determining the external differential quantum efficiencies, d .͒ Parabolic fits to the thresholds yield the minimum values along with an independent determination of the resonant pump wavelengths. As in previous studies employing tuned OPO excitation, 17,31 to within experimental error the minimum I th and maximum d occur at the same R ͑which falls in between the integer nanometer OPO wavelength values employed to acquire the data͒.…”
Section: Experimental Efficiencies and Thresholdssupporting
confidence: 70%
“…The wafer from which the W-OPIC devices were cleaved was grown by molecular beam epitaxy on an n-GaSb substrate, as described previously. 17 The strain-compensated active region, which was designed for emission at Ϸ3 m at room temperature, has ten periods of an InAs/GaSb/InAs/ AlSb type-II W-well with thicknesses 21 Å/34 Å/21 Å/40 Å. These are surrounded on both sides by AlAs 0.08 Sb 0.92 holeblocking layers ͑100 Å͒ and GaSb spacer layers ͑5213 Å͒.…”
Section: Methodsmentioning
confidence: 99%
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