Resonator Characteristics of Bismuth Layer Structured Ferroelectric Materials

Andõ, Akira; Kimura, Masahiko

doi:10.1007/978-1-4419-9598-8_13

Cited by 3 publications

(2 citation statements)

References 99 publications

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“…Nowadays, lead-based electro-ceramics as PZT are the most used due they have excellent piezoelectric (d33=590-610 pC/N) and dielectric (r=1700-1790) properties [1,2]. However, considering the high toxicity of lead and its volatility at high temperatures, required for the synthesis of lead-based ceramics, there is a trend towards the development of lead-free ferroelectric systems [3].…”

Section: Introductionmentioning

confidence: 99%

Structural, Ferroelectric, Pyroelectric, and Dielectric Study of Bi0.5Na0.5TiO3 Ceramics synthesized with Precursors Obtained by Sol-Gel Method doped with Lanthanum

Serralta-Macías1

Calderón-Piñar

Zaldivar

et al. 2021

Preprint

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In this work, the ferroelectric, pyroelectric and dielectric properties of La-doped bismuth sodium titanate ceramics (BNLT) using amounts from 0 to 6.7 at.% La were studied. The precursor powders used to make dense BNLT ceramics were obtained by the sol-gel method using the acetic acid route. All samples were calcined at 700°C for 1hr and sintered at 1150°C for 30 min in an encapsulated crucible to avoid Na and Bi volatilization, obtaining relative densities equal or higher than 94%. The obtained X-ray diffraction patterns typical of the perovskite structure, confirm the incorporation of lanthanum into the lattice, evolving from rhombohedral phase to a mixture of rhombohedral and cubic structure for higher concentrations. Thermogravimetry (TG) and Differential Scanning Calorimetry (DSC) results indicate that the crystallization of precursors powders of BNT takes place between 500 and 700°C. Additionally, the Scanning Electron Microscopy (SEM) micrographs reveal a decrement of grain size from 4.5 to 0.5 μm with increasing La content. The ferroelectric hysteresis curves show that the best ferroelectric properties were obtained for BNT 1.3% La, where the obtained values of remnant polarization and coercive field were Pr=29 μC/cm2 and Ec=39 kV/cm respectively. Also, at this concentration, the pyroelectric response shows the higher value, 4 times the pyroelectric signal of the pure BNT.

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Section: Introductionmentioning

confidence: 99%

Structural, Ferroelectric, Pyroelectric, and Dielectric Study of Bi0.5Na0.5TiO3 Ceramics synthesized with Precursors Obtained by Sol-Gel Method doped with Lanthanum

Serralta-Macías1

Calderón-Piñar

Zaldivar

et al. 2021

Preprint

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“…[10] Consequently, BLSFs piezoelectrics possess high Curie temperature T c (500-1000 °C), high mechanical quality factors, and low aging rates, which make them promising candidates for the hightemperature electronic industry. [11][12][13] Bismuth titanate, Bi 4 Ti 3 O 12 (BIT), is always regarded as an excellent candidate for high-temperature electromechanical systems owing to its high Curie temperature (T c is of 675 °C) as well as outbound spontaneous polarization (P s is of 50 µC cm −2 along the a-axis). [14][15][16] However, the piezoelectricity of BIT ceramics is poor (only 6-8 pC N −1 ) due to its strong anisotropic polarization, a large coercive field, and high leakage current.…”

mentioning

confidence: 99%

Superior Piezoelectricity in Bismuth Titanate‐Based Lead‐Free High‐Temperature Piezoceramics via Domain Engineering

Xie

Zhou

Liang

et al. 2022

Adv Elect Materials

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requirements of functionality and stabilization at high-temperature conditions. [5][6][7] Ferroelectric ceramics with the perovskite structure ABO 3 , such as BaTiO 3 , Pb(Zr,Ti)O 3 , and Pb(Mg 1/3 Nb 2/3 ) O 3 -PbTiO 3 , usually possess high piezoelectric constants d 33 (100-1500 pC N −1 ), but their Curie temperature T c is low (50-400 °C). [8,9] Thus, the usage range of the system is restricted to below 300 °C. Bismuth layer-structured ferroelectrics (BLSFs) have the general chemical formula (Bi 2 O 2 ) 2+ (A m-1 B m O 3m+1 ) 2− , and their structure is that (A m-1 B m O 3m+1 ) 2− perovskite layers are sandwiched between (Bi 2 O 2 ) 2+ fluorite-like layers along the c-axis. [10] Consequently, BLSFs piezoelectrics possess high Curie temperature T c (500-1000 °C), high mechanical quality factors, and low aging rates, which make them promising candidates for the hightemperature electronic industry. [11][12][13] Bismuth titanate, Bi 4 Ti 3 O 12 (BIT), is always regarded as an excellent candidate for high-temperature electromechanical systems owing to its high Curie temperature (T c is of 675 °C) as well as outbound spontaneous polarization (P s is of 50 µC cm −2 along the a-axis). [14][15][16] However, the piezoelectricity of BIT ceramics is poor (only 6-8 pC N −1 ) due to its strong anisotropic polarization, a large coercive field, and high leakage current. Extensive research has been made to acquire high-performance BITbased ceramics, including chemical modification and grain orientation techniques. [17][18][19][20][21][22][23] For example, a high d 33 of 21 pC N −1 and T c of 655 °C, as well as a lower dielectric loss of 0.3%, High-temperature piezoelectric materials are widely needed in electromechanical sensors, actuators, and transducers that are exposed to high-temperature conditions. Bismuth layer-structured bismuth titanate (Bi 4 Ti 3 O 12 , BIT) ferroelectrics have a high Curie temperature of 675 °C but suffer from poor electrical properties, especially the piezoelectricity. Here, a giant piezoelectric coefficient d 33 of 40.2 pC N −1 is obtained in the Bi 3.97 Ce 0.03 Ti 2.98 (WNb) 0.01 O 12 ceramics with a high Curie temperature of 657 °C, the highest value reported to date in BIT-based piezoceramics. Electrical property and microstructural analysis reveal that the high piezoelectricity benefits from the preferential orientation of ferroelectric domains, the irreversibility of ferroelectric domain reorientation, and the high density of ferroelectric domain walls. Besides, excellent thermal stability of piezoelectric constant (d 33 = 36.7 pC N −1 at 500 °C, <10% variations in the range of room temperature to 500 °C), high electrical resistivity (ρ > 10 7 Ω cm at 500 °C), and low loss (tanδ < 1.5% at 500 °C) are also obtained in the Bi 3.97 Ce 0.03 Ti 2.98 (WNb) 0.01 O 12 ceramics. This work not only penetrates the origins of outstanding piezoelectricity of BITbased ceramics but also offers prospects for brand-new tactics to exploit high-performance high-temperature piezoceramics.

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Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

2023

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The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hindered by the high sintering temperatures required for conventional perovskite fabrication techniques. Thus, a process was developed to manufacture lead-free printed piezoelectric devices at low temperatures to enable integration with eco-friendly substrates and electrodes. A printable ink was developed for screen printing potassium niobate (KNbO3) piezoelectric layers in microns of thickness at a maximum processing temperature of 120 °C with high reproducibility. Characteristic parallel plate capacitor and cantilever devices were designed and manufactured to assess the quality of this ink and evaluate its physical, dielectric, and piezoelectric characteristics; including a comparison of behaviour between conventional silicon and biodegradable paper substrates. The printed layers were 10.7–11.2 μm thick, with acceptable surface roughness values in the range of 0.4–1.1 μm. The relative permittivity of the piezoelectric layer was 29.3. The poling parameters were optimised for the piezoelectric response, with an average longitudinal piezoelectric coefficient for samples printed on paper substrates measured as d33, eff, paper = 13.57 ± 2.84 pC/N; the largest measured value was 18.37 pC/N on paper substrates. This approach to printable biodegradable piezoelectrics opens the way forward for fully solution-processed green piezoelectric devices.

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Resonator Characteristics of Bismuth Layer Structured Ferroelectric Materials

Cited by 3 publications

References 99 publications

Structural, Ferroelectric, Pyroelectric, and Dielectric Study of Bi0.5Na0.5TiO3 Ceramics synthesized with Precursors Obtained by Sol-Gel Method doped with Lanthanum

Structural, Ferroelectric, Pyroelectric, and Dielectric Study of Bi0.5Na0.5TiO3 Ceramics synthesized with Precursors Obtained by Sol-Gel Method doped with Lanthanum

Superior Piezoelectricity in Bismuth Titanate‐Based Lead‐Free High‐Temperature Piezoceramics via Domain Engineering

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

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