Response Ability and Detection of Load Position to Cyclic Stress in LiNbO3 Thin Film with c-Axis Orientation on Polycrystalline Si3N4 Substrates.

Abstract

LiNbO3 thin films with c-axis orientation were deposited on polycrystalline Si3N4 substrates by means of RF -magnetron sputtering method. Response ability to cyclic stress of the Si3N4 specimen coated by LiNbO3 thin films was evaluated by a 3-point bending fatigue test. The voltage range produced by LiNbO3 thin films in creased linearly with the maximum stress during the cyclic test. The voltage range depended on the frequen cy of cyclic stress. The position of cyclic compressional load was revealed due to the different generations of voltage signals at a multielectrode placed between the LiNbO3 thin film and Si3N4 substrate.

Preparation of Highly Oriented Aluminum Nitride Thin Films on Polycrystalline Substrates by Helicon Plasma Sputtering and Annealing

“…Ceram. Soc., 84 [9] 1917-20 (2001) 1917 journal radiation. The FWHM of the X-ray rocking curves of the (002) peaks of the thin films was measured to evaluate the crystal orientation of the thin films.…”

“…The voltage output produced by the thin film was recorded with a storage oscilloscope (Model DCS-9320, Kenwood, Kanagawa, Japan). 9 An aluminum layer was deposited on the film surface as a contact. The load was 38.1-294 MPa, and the frequency of the load was 20 -50 Hz.…”