Response of GaN to energetic ion irradiation: conditions for ion track formation

Karlušić, Marko; Kozubek, Roland; Lebius, H.; Ban-d’Etat, B.; Wilhelm, R.; Buljan, Maja; Siketić, Zdravko; Scholz, F.; Meisch, Tobias; Jakšić, Milko; Bernstorff, Sigrid; Schleberger, M.; Šantić, Branko

doi:10.1088/0022-3727/48/32/325304

Cited by 41 publications

(56 citation statements)

References 74 publications

(131 reference statements)

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“…Because one would expect a reduced efficiency close to the track formation threshold, we conclude that an electronic stopping power of 2.9 keV nm −1 (corresponding to 10 MeV I irradiation) is still well above the threshold for surface ion track formation. This is in agreement with the observation in [30], although thresholds for surface ion tracks produced in the normal and under the grazing geometry probably cannot be compared directly [19].…”

Section: Afm and Tof-erda Resultssupporting

confidence: 90%

“…Due to the existence of the velocity effect, medium sized accelerators can provide important complementary data at energies below 1 MeV amu −1 which are not easily accessible to large accelerators. In particular, the threshold for ion track formation constitutes an important experimental quantity (often needed for testing various ion-solid interaction models) that can be in many cases easily accessible to medium sized accelerators [1,9,11,16,19,25,26]. Similar to ion tracks in the bulk, there is always a threshold for nanohillock formation on the surface.…”

Section: Introductionmentioning

confidence: 99%

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On the threshold for ion track formation in CaF₂

et al. 2017

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There is an ongoing debate regarding the mechanism of swift heavy ion (SHI) track formation in CaF 2 . The objective of this study is to shed light on this important topic using a range of complementary experimental techniques. Evidence of the threshold for ion track formation being below 3 keV nm −1 is provided by both transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy in the channelling mode, which has direct consequences for the validity of models describing the response of CaF 2 to SHI irradiation. Furthermore, information about the elemental composition within the ion tracks is obtained using scanning TEM, electron energy loss spectroscopy, and with respect to the stoichiometry of the materials surface by in situ time of flight elastic recoil detection analysis. Advances in the analyses of the experimental data presented here pave the way for a better understanding of the ion track formation.

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Section: Afm and Tof-erda Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

On the threshold for ion track formation in CaF₂

et al. 2017

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“…Surprisingly, almost all surface track phenomena could successfully be described in terms of the thermal spike, see i.e. [3,6,19] . However, even if this was true this would not exclude the possibility of other processes taking place and contributing to the final state.…”

Section: Introductionmentioning

confidence: 99%

A new setup for the investigation of swift heavy ion induced particle emission and surface modifications

Meinerzhagen

Breuer

Bukowska

et al. 2016

Review of Scientific Instruments

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The irradiation with fast ions with kinetic energies of > 10 MeV leads to the deposition of a high amount of energy along their trajectory (up to several ten keV/nm). The energy is mainly transferred to the electronic subsystem and induces different secondary processes of excitations which result in significant material modifications. A new setup to study these ion induced effects on surfaces will be described in this paper. The setup combines a variable irradiation chamber with different techniques of surface characterizations like scanning probe microscopy, time-of-flight secondary ion and neutral mass spectrometry, as well as low energy electron diffraction under ultra high vacuum conditions, and is mounted at a beamline of the universal linear accelerator (UNILAC) of the GSI facility in Darmstadt, Germany.Here, samples can be irradiated with high-energy ions with a total kinetic energy up to several GeVs under different angles of incidence. Our setup enables the preparation and in-situ analysis of different types of sample systems ranging from metals to insulators. Time-of-flight secondary ion mass spectrometry enables us to study the chemical composition of the surface, while scanning probe microscopy allows a detailed view into the local electrical and morphological conditions of the sample surface down to atomic scales. With the new setup particle emission during irradiation as well as persistent modifications of the surface after irradiation can thus be studied. We present first data obtained with the new setup, including a novel measuring protocol for time-of-flight mass spectrometry with the GSI UNILAC accelerator.2

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“…Also, radiation temperature and ion velocity can influence the SHI track formation [15,31]. The S e threshold for GaN was found to be between 22.8 and 28.3 keV/nm [19]. The S e threshold for InN has not yet been reported to our best knowledge.…”

Section: Ion Track and Structurementioning

confidence: 90%

“…A transient process of local material melting and re-solidification along the ion pathway could occur [13,16]. SHI irradiation induced modifications in GaN have been extensively reported, including ion track formation [17][18][19], film delamination [17,20], lattice expansion [21,22], and degradation in electrical and optical properties [22,23]. However, there have been much fewer publications in the literature for SHI irradiation studies of InGaN.…”

Section: Introductionmentioning

confidence: 99%

Microstructural response of InGaN to swift heavy ion irradiation

Zhang

Jiang

Fadanelli

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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A monocrystalline In 0.18 Ga 0.82 N film of ~275 nm in thickness grown on a GaN/Al 2 O 3 substrate was irradiated with 290 MeV 238 U 32+ ions to a fluence of 1.2×10 12 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18 Ga 0.82 N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18 Ga 0.82 N is ~9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In 0.18 Ga 0.82 N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In 0.18 Ga 0.82 N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed by HRXRD.

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Response of GaN to energetic ion irradiation: conditions for ion track formation

Cited by 41 publications

References 74 publications

On the threshold for ion track formation in CaF₂

On the threshold for ion track formation in CaF₂

A new setup for the investigation of swift heavy ion induced particle emission and surface modifications

Microstructural response of InGaN to swift heavy ion irradiation

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Response of GaN to energetic ion irradiation: conditions for ion track formation

Cited by 41 publications

References 74 publications

On the threshold for ion track formation in CaF2

On the threshold for ion track formation in CaF2

A new setup for the investigation of swift heavy ion induced particle emission and surface modifications

Microstructural response of InGaN to swift heavy ion irradiation

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On the threshold for ion track formation in CaF₂

On the threshold for ion track formation in CaF₂