Response of tunnel schottky-barrier junctions to radiation pressure of fir laser radiation

Ганичев, С. Д.; Shul’man, A.; Mordovets, N. A.; Kotel’nikov, I.; Prettl, Wilhelm

doi:10.1007/bf02068787

Cited by 8 publications

(14 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In all experimental situations described until now electron heating is not important. In samples with small field enhancement, like type A, electron heating has not been observed [3]. In junctions of type B with very large field enhancement the effect of electron heating on the response is negligible at high bias voltages.…”

Section: Resultsmentioning

confidence: 95%

Near-Zone Field Effect of FIR Laser Radiation on Tunnel Current through the Schottky Barrier under Plasma Reflection Condition

Shul’man

Ganichev

Kotel’nikov

et al. 1999

phys. stat. sol. (a)

Self Cite

View full text Add to dashboard Cite

Far infrared (FIR) radiation of high‐power pulsed laser incident normal to the surface of GaAs/metal tunnel structures with a self‐consistent Schottky barrier gives rise to a change in the tunnel conductance. It has been shown that the observed photoresistive effects are caused by ponderomotive forces of the radiation field on the free electron plasma in the junctions. The change of tunnel conductance rises linearly with increasing intensity at low power levels and proceeds into a strongly superlinear dependence at high intensities. It is shown that this superlinearity is a result of an enhancement of the local radiation field in the near zone of diffraction by inhomogeneities at the metal–semiconductor interface and depends strongly on the roughness of the metal electrode. Experimental results are compared to a nonlinear extension of the theory of electron redistribution due to the radiation pressure.

show abstract

Section: Resultsmentioning

confidence: 95%

Near-Zone Field Effect of FIR Laser Radiation on Tunnel Current through the Schottky Barrier under Plasma Reflection Condition

Shul’man

Ganichev

Kotel’nikov

et al. 1999

phys. stat. sol. (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…1. Using a pulsed FIR laser at wavelength " 90.5 m [3] a nonlinear dependence of the response on the intensity J of incident radiation has been observed [4] which was also explained by ponderomotive forces generated by the incident radiation. However, one had to assume, that the electric "eld acting on the electrons in the semiconductor should correspond to the &e!ective' radiation intensity K J about 10}10 times higher than the incident one.…”

Section: Introductionmentioning

confidence: 91%

“…The derivation of these expressions, the discussion of the respective approximations and further references can be found in Refs. [1,2,4,7]. It is necessary only to note unlike Ref.…”

Section: Electron Heating In Ultra-high 5eldmentioning

confidence: 99%

“…To this end the error function Er(K , , a, b) was de"ned as the measure of the deviation of the calculated response from the data in some subset of measured data points. After some optimal values of parameters are found by minimization of Er function, the abovedescribed procedures of solution of the circuit equation (4) for <H and ¹H at all measured values J were applied and results compared with the input data in Fig. 3 both for photo-e.m.f.…”

Section: I(mentioning

confidence: 99%

See 1 more Smart Citation

Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation

Shul’man¹

1999

Physica B: Condensed Matter

View full text Add to dashboard Cite

The conductance of tunnel junctions formed by n-GaAs and a semitransparent metal electrode on its surface was shown to be changed by normally incident radiation with frequency below the plasma edge of n-GaAs. A spatial redistribution of the electrons due to the radiation pressure and the corresponding change in the shape of the self-consistent Schottky barrier are observed as a photoconductivity response. The comparison of the measured intensity dependence of the response to the theory has revealed an e!ective enhancement of the radiation "eld close to the n-GaAs/Me interface. The ratio K of the e!ective radiation intensity to the incident plain-wave intensity has turned out to be as large as 10. The high local electric "eld results in strong heating of the degenerate electron gas in the Schottky-barrier region that is mostly apparent as a photo-e.m.f. An analysis of the intensity dependence of the photo-e.m.f. is carried out involving the modi"cation of the Schottky barrier by the ponderomotive force, the electron gas heating in-and L-valleys, as well as the heating of LO phonons. The results con"rm the value of K and allow to estimate the hot-electron temperature in-and L-valleys.

show abstract

“…The electromagnetic wave being totally reflected by the plasma transfers momentum to the electrons of the semiconductor. This leads to a spatial redistribution of the electrons due to the radiation pressure and yields a photoresistive effect resulting from the corresponding change in the shape of the self-consistent Schottky barrier [1,2] Recently, a nonlinear dependence of the response on the intensity of incident radiation has been observed [3]. It turned out that the measured nonlinear response can also be explained with ponderomotive forces generated by the incident radiation.…”

Section: Introductionmentioning

confidence: 99%

Edge Condition in Diffraction Theory and Maximum Enhancement of Electromagnetic Field in the Near Zone

Shul’man

1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

The equations for electromagnetic fields diffracted by an aperture in a screen are derived containing explicitly charge and current densities as field sources. These sources are shown to be fully defined by the solution of Maxwell equations for the same screen without aperture. The boundary conditions for the diffraction field are reconsidered and the reasons for the violation of Meixner “edge conditions” are pointed out. The results obtained are used to estimate the maximum enhancement of the field in the near‐zone region.

show abstract

Response of tunnel schottky-barrier junctions to radiation pressure of fir laser radiation

Cited by 8 publications

References 7 publications

Near-Zone Field Effect of FIR Laser Radiation on Tunnel Current through the Schottky Barrier under Plasma Reflection Condition

Near-Zone Field Effect of FIR Laser Radiation on Tunnel Current through the Schottky Barrier under Plasma Reflection Condition

Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation

Edge Condition in Diffraction Theory and Maximum Enhancement of Electromagnetic Field in the Near Zone

Contact Info

Product

Resources

About