Response studies on silicon surface barrier detectors for low energy ion spectrometry in space

Rooijen, J. J. van; Lowes, P.; Mels, W. A.; Henrion, J.

doi:10.1016/0168-9002(84)90164-5

Cited by 2 publications

(1 citation statement)

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“…The application of SSBDS has now been extended to low-energy ion spectrometry in space [2] and to Rutherford back-scattering analysis of semiconducting materials using low-energy He ion and proton beams [3]. Although planar processes used in IC fabrication have produced acceptable silicon diodes, the window of these junction diodes is much thicker in comparison with conventional SSBDS [4].…”

Section: Introductionmentioning

confidence: 99%

Charge collection in surface barrier diodes

Haque

Haško

1987

J. Phys. D: Appl. Phys.

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340 keV protons and 5.5 MeV alpha particles have been employed to measure the window thickness of silicon surface barrier diodes that have undergone oxidation in potassium dichromate solution, steam oxidation and oxygen gas aging. It has been found that the window thickness is independent of the silicon resistivity (300-11000 Omega cm) and that the dead layer part of the window cannot be treated as a simple geometric layer. A model has been developed to explain this by considering charge collection and loss mechanisms. The model considers the creation of a plasma along the track of the particle; the expansion and erosion time of the plasma constitute the total time during which recombination of carriers may take place at the surface. The window thickness is given by Wx=-A In E0+B, where E0 is the maximum field in the depletion layer and A, B are constants. The constants A and B have been extracted from the experimental results and compared with the calculated ones.

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Section: Introductionmentioning

confidence: 99%