Response Time Measurements in Short-Wave Infrared HgCdTe e-APDs

Rothman, J.; Foubert, Kevin; Lasfargues, Gilles; Largeron, C.

doi:10.1007/s11664-014-3155-9

Cited by 26 publications

(16 citation statements)

References 8 publications

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“…Bandwidth is calculated from the relation, BW = 2.2/2πτ response . Rothman 59,62 , et al of the same group have observed the gain of 600 with excess noise factor (F) =1.2 in short wave e-APD (λ c = 2.9 µm, x cd = 0.4) at 80 K operating temperature. They have measured gain of 200 with F < 1.3 and dark current = 6.2 µA/cm 2 with λ c = < 2.8 µm at 300 K operating temperature.…”

Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

“…based MWIR e-APD Vacancy doped p-type Hg 1-x Cd x Te epilayer grown on (111)B CdZnTe substrate with composition x = 0.30, carrier Gain ~ 5000 at -12 V; F: 1-1.5; first measurement of impulse response time; BW = 600 MHz; GBW=2.1THz at gain of 2800; Sofradir/ CEA-LETI [59][60]62 λ c = 2 µm to 2.9 µm (SWIR) 16 cm -3 . The devices are exposed to the 300 K background during the dark current and the dark plus photocurrent versus voltage were measurement at 80 K. Figure 5 shows the dark current and dark plus photo current as a function of reverse bias.…”

Section: Fabrication and Characteristics Of Hgcdtementioning

confidence: 99%

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Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

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Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

Section: Fabrication and Characteristics Of Hgcdtementioning

confidence: 99%

Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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“…8). Currents values are normalized by the pixel area, (30 µm) 2 , and by the measured gain for the high reverse bias. For both measurements we have also plotted a fit using the sum of a generation recombination (GR), a diffusion and a photonic current.…”

Section: Dark Current Of a 3 µM Fpamentioning

confidence: 99%

“…The response time of the APD is also a key factor for a high frame rate FPA. This parameter has been evaluated in [2] and the results shows cut off frequencies in the GHz range.…”

Section: Introductionmentioning

confidence: 99%

SWIR HgCdTe avalanche photiode focal plane array performances evaluation

Borniol

Rothman

Salveti

et al. 2017

International Conference on Space Optics — ICSO 2014

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“…The exclusive electron multiplication in MCT APDs is a major advantages, as it implies that only one transit time needs to be accounted for each type of carriers. Hence, the gain do not directly influence the transit time why ultra-high gain bandwidth products can be achieved in theses detectors [5,6,7]. The highest measured bandwidth of 800 MHz for M=100 is thought to be limited by impedance miss-match in the inter-connexion circuit used to enable a backside illumination of the diode [7].…”

Section: Introductionmentioning

confidence: 99%

HgCdTe APDS for time resolved space applications

Rothman

Lasfargues

Delacourt

et al. 2017

International Conference on Space Optics — ICSO 2016

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I. INTRODUCTIONHgCdTe APDs have opened a new horizon in photon starved applications due to their exceptional performance in terms of high linear gain, low excess noise and high quantum efficiency. Both focal plane arrays (FPAs) and large array single element using HgCdTe (MCT) APDs have been developed at CEA/Leti and Sofradir and high performance devices are at present available to detect without deterioration the spatial and/or temporal information in photon fluxes with a low number of photon in each spatio-temporal bin. The enhancement in performance that can be achieved with MCT has subsequently been demonstrated in a wide scope of applications such as astronomical observations, active imaging, deep space telecommunications, atmospheric LIDAR and mid-IR (MIR) time resolved photoluminescence measurements. Most of these applications can be used in space borne platforms.In the present communication we will focus on our recent development and tests of detectors for applications that only require the temporal information and can be addressed using single element MCT APDs, such as LIDAR and high data rate free-space optical communication. The use of MCT APD for these applications will be discussed in section II in perspective of how the gain, dark current and response time varies as a function of Cd composition and operating temperature. The discussion will be illustrated, in section III, by the performance obtained detector assemblies using large area high operating temperature (190 K) APDs, in which we typically obtain noise equivalent powers in the range of 25-80 fW/√Hz for bandwidth ranging from 20 to 200 MHz. In particular, we report results obtained on an APD detector that has been used by Laboratorie de Meterologie Dynamique (LMD) to perform DIAL-LIDAR measurements at 2 µm up to distance close to 10 km and discuss the performances that can be achieved using MCT APDs in free space optical telecommunications up to 10 Gbit/s data rates and/or at single photon detection limit.The results of first space reliability tests made on Leti HgCdTe APDs, in collaboration with CNES are presented in section IV. The space reliability test consisted of proton irradiation and endurance at T=-85 °C operation and with variable reverse bias. The conclusion and perspective for the use of HgCdTe APDs for space applications are finally presented in section V.

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Response Time Measurements in Short-Wave Infrared HgCdTe e-APDs

Cited by 26 publications

References 8 publications

Infrared Avalanche Photodiode Detectors

Infrared Avalanche Photodiode Detectors

SWIR HgCdTe avalanche photiode focal plane array performances evaluation

HgCdTe APDS for time resolved space applications

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