Responses’ parameters of hydrogen sensors based on MISFET with Pd(Ag)-Ta2O5-SiO2-Si structure

Podlepetsky, B.; Samotaev, Nikolay; Kovalenko, A.

doi:10.1016/j.snb.2019.03.083

Cited by 8 publications

(9 citation statements)

References 22 publications

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“…[ 47 ] Two oxide layer dielectrics applied in MIS structure are: Pd–Ni/AlN/n‐Si [ 48 ] and Pd (Ag)/Ta 2 O 5 –SiO 2 –Si. [ 49 ]…”

Section: Introductionmentioning

confidence: 99%

“…[47] Two oxide layer dielectrics applied in MIS structure are: Pd-Ni/AlN/n-Si [48] and Pd (Ag)/Ta 2 O 5 -SiO 2 -Si. [49] However, the review focuses primarily on metal-oxide-semiconductor-type hydrogen sensors, the working mechanism, and the materials used in the sensors for sensing hydrogen effectively. The paper reviews all three work function-based hydrogen sensors: i) MS and MOS Schottky diode, ii) MOS capacitor, and iii) metal-oxide-semiconductor field-effect transistor (MOSFET).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Sahoo

Kale

2021

Adv Materials Inter

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Solar PV and wind energy conversion systems convert input energy directly to electricity, are techno-economically viable, and have already achieved grid parity. [3,4] Though renewables fulfill most modern energysource criteria, they still possess low energy density, are challenging to transport, less efficient, costly, and are intrinsically intermittent, thus requiring a storage media.Hydrogen, a less popular renewable, can be used as a fuel as apart from being abundant gas, possesses high energy density, [5] exhibits better combustion characteristics, [5] owes a nonpolluting nature, [6] and has several other favorable properties, listed in Table 1. Hydrogen is a promising alternative energy source [6,7] that overcomes most of the challenges faced by classical renewables.Figure 2 describes hydrogen energy transformation from primary energy sources to the end-users in an integrated way. The hydrogen production, storage, transportation and delivery, application, awareness and capacity building, safety codes and standards are all interrelated to form the hydrogen energy system. The two prime methods of producing hydrogen are i) from the conventional process, and ii) using renewable energy sources (such as biomass, solar, wind, and hydro). Hydrogen possesses significantly higher gravimetric energy density than other storage techniques (such as batteries, pumped hydropower, supercapacitors, Flywheels, pressurized air). The use of abundant renewable energy when available, hydrogen production, and storage is an optimal choice. Hydrogen can be stored as pressurized gas or as a cryogenic liquid or solid fuel. [27] Storage of hydrogen as a gas typically requires high-pressure tanks (350-700 bar tank pressure). Due to the low boiling point (−252.8 °C at atmospheric pressure), liquid hydrogen storage requires cryogenic temperature.The conventional conversion of fossil fuel feedstock to hydrogen includes steam-methane reforming, thermal cracking of natural gas, thermal decomposition (partial oxidation) of heavy oil, catalytic decomposition of natural gas, coal gasification, and steam-iron coal gasification. [20][21][22][23][24][25] When released into the atmosphere, the conventional methods generate CO 2 as a by-product, assisting global warming. The generation of renewable hydrogen makes it more economical and environmentally benign. Electrolysis uses electrical power supplied from renewables to produce hydrogen and oxygen. Biomass routes Hydrogen, a nonpolluting gas, is emerging as an ideal, suitable, and economical energy carrier. The current global non-carbon hydrogen production is 105.8 MW in 2020 and is expected to reach 218 MW in 2021. Hydrogen possesses low ignition energy of 0.017 mJ and reacts exothermically with air, posing severe safety challenges. Humanly undetectable gas needs accurate and sensitive sensors to prevent accidents. Amongst different hydrogen sensors currently developed, work function-based sensors are sensitive, selective, costeffective, smaller in size, less susceptible to environmental change, an...

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“…[ 47 ] Two oxide layer dielectrics applied in MIS structure are: Pd–Ni/AlN/n‐Si [ 48 ] and Pd (Ag)/Ta 2 O 5 –SiO 2 –Si. [ 49 ]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Sahoo

Kale

2021

Adv Materials Inter

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“…Therefore, in recent years we have investigated the characteristics of this MISFET. The performance characteristics of these sensors and effects of chip temperature, electrical mode and irradiation were studied in our previous works [16,17,18,19,20].…”

Section: Introductionmentioning

confidence: 99%

Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta2O5-SiO2-Si Structure During Long-Term Operation

Podlepetsky

Samotaev

Nikiforova

et al. 2019

Sensors

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We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip’s thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation.

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“…A great contribution to the developments of gas-sensitive MIS-devices has been made by the researchers at Linköping University since their pioneering work 2 and subsequent works. [3][4][5][6][7][8][9][11][12][13]16,17 MIS-sensors with different gates' materials [palladium, platinum, 5 iridium, 6 alloys Pd-Cr, 14 Pd-Ni, 14 Pd-Ag 25 ], with different dielectrics SiO 2 , Al 2 O 3 , Si 3 N 4 -SiO 2 , TiO 2 -SiO 2 , Ta 2 O 5 -SiO 2 and AlN have been investigated. There were used Si, SiC 17 and GaAs as semiconductors in MIS-sensors.…”

mentioning

confidence: 99%

“…That is why, in recent years we have investigated characteristics of integrated sensors based on this FET. [19][20][21][22][23][24][25] It was shown how the performance characteristics of these sensors (sensitivity, speed and stability) depend on chip temperature, electrical mode, irradiation, and the corresponding models were proposed in Refs. 20-25. Sensors' characteristics were determined by measurements of the amplitude and time parameters of hydrogen responses, which have dispersions from 5% to 20% for different sensor's types.…”

mentioning

confidence: 99%

Errors of Integrated Hydrogen Sensors Based on FETs with Structure Pd (Ag)–Ta₂O₅–SiO₂–Si

Podlepetsky

Kovalenko²

2020

J. Electrochem. Soc.

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The object of the study was an integrated sensor’s cell consisting of n-channel FET-sensor element based on Pd(Ag)–Ta2O5–SiO2–Si structure, fabricated on Si-chip together with heater-resistor and temperature sensor by means of conventional n-MOS-technology using laser evaporation Pd(Ag)-films. Estimation of hydrogen concentration measurement’s errors by FET-sensors has been done, using the models based on the experimental data. Proposed models of absolute and relative errors include components that take into account the instrumental errors of measurement units; the random errors associated with dispersions of sensors’ output voltages; fluctuations of chip temperature and electrical circuits’ parameters; additional errors due to the influence of other gases and radiation. It is shown how the errors depend on sensor sensitivity, hydrogen concentrations and total hydrogen dose. Examples of how to estimate the threshold of sensitivity and the operating range of concentration measurements for a given relative error are presented.

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Responses’ parameters of hydrogen sensors based on MISFET with Pd(Ag)-Ta2O5-SiO2-Si structure

Cited by 8 publications

References 22 publications

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta2O5-SiO2-Si Structure During Long-Term Operation

Errors of Integrated Hydrogen Sensors Based on FETs with Structure Pd (Ag)–Ta₂O₅–SiO₂–Si

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Responses’ parameters of hydrogen sensors based on MISFET with Pd(Ag)-Ta2O5-SiO2-Si structure

Cited by 8 publications

References 22 publications

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta2O5-SiO2-Si Structure During Long-Term Operation

Errors of Integrated Hydrogen Sensors Based on FETs with Structure Pd (Ag)–Ta2O5–SiO2–Si

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Errors of Integrated Hydrogen Sensors Based on FETs with Structure Pd (Ag)–Ta₂O₅–SiO₂–Si