Results of a pilot study and a proposal to build a high current pulsed nanosecond low energy Si ion beam for the detection of trace amounts of heavy impurities in silicon

Abstract

Next generations of Very Large Scale Integrated circuits will require impurity contamination below lo8 atoms/cm*. To detect such small quantities at or near the surface, new techniques have to be developed. We propose to build a high current nanosecond pulsed Si ion beam which can detect such small quantities of heavy impurities with a high mass resolution. A pilot study shows that our approach can be used to detect impurities in silicon below the -lo7 atoms/cm2 level. DISCLAIMER