2006
DOI: 10.1117/12.681868
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RET masks for patterning 45nm node contact hole using ArF immersion lithography

Abstract: Immersion exposure system with the numerical aperture (NA) greater than unity effectively extends the printing resolution limit without the need of shrinking the exposure wavelength. From the perspective of imaging contact hole mask, we are convinced that a mature ArF immersion exposure system will be able to meet 45nm node manufacturing requirement. However, from a full-chip mask data processing point of view, a more challenging question could be: how to ensure the intended RET mask to best achieve a producti… Show more

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Cited by 2 publications
(2 citation statements)
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“…There are several resolution enhancement techniques (RET) that have been proposed to enable lower k 1 patterning of contact holes. These includes the use of phase shifting masks for enhancing the aerial image log slope [2,3], double patterning (DP) [4,5] for extremely dense contact holes array, interference mapping lithography (IML) for assist features placement [6,7], contact holes shrink process using chemical shrink materials [8,9], and more recently simultaneous source and mask optimization (SMO) [10]. These techniques are capable of improving the process window and printability of contact holes.…”
Section: Introductionmentioning
confidence: 99%
“…There are several resolution enhancement techniques (RET) that have been proposed to enable lower k 1 patterning of contact holes. These includes the use of phase shifting masks for enhancing the aerial image log slope [2,3], double patterning (DP) [4,5] for extremely dense contact holes array, interference mapping lithography (IML) for assist features placement [6,7], contact holes shrink process using chemical shrink materials [8,9], and more recently simultaneous source and mask optimization (SMO) [10]. These techniques are capable of improving the process window and printability of contact holes.…”
Section: Introductionmentioning
confidence: 99%
“…They may have severe impact on their lithographic performance and therefore need to be investigated carefully. CPL masks have been studied for usage in advanced lithography since many years [1][2][3][4][5][6][7]. Main focus for application in the past was logic devices.…”
Section: Introductionmentioning
confidence: 99%