Retardation of Recrystallization in the TiC – SiC System

Podkovyrkin, M. I.; Kartashov, V. V.

doi:10.1023/b:refr.0000023345.69786.e8

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TiC and SiC phases have little sinterability at 1450°C and little chemical bonding would exist between carbide particles in the material at this temperature . However, our results have demonstrated that bulk C‐TiC/SiC composites can be prepared at 1450°C.…”

Section: Resultsmentioning

confidence: 68%

Synthesis of Mesoporous Carbon‐Bonded TiC/SiC Composites by Direct Carbothermal Reduction of Sol–Gel Derived Monolithic Precursor

et al. 2011

View full text Add to dashboard Cite

Mesosporous carbon‐bonded titanium‐carbide/silicon‐carbide (C‐TiC/SiC) ceramics with a high specific surface area (221 m2/g), ultra fine grains (10–50 nm), and high crystallinity were synthesized from direct carbothermal reduction (1100°–1450°C) of monolithic Ti–Si–O–C precursors made from controlled sol–gel process. The nano‐sized carbide grains are bonded into bulk materials by poly(furfuryl alcohol) (PFA) derived nanocrystalline carbon framework by “bridge,” “entanglement,” and “adhesive” effects. Graphenes were found to grow on {111} planes of TiC grains but this was not observed for SiC. The bonding of graphitic carbon layers on carbide grains support the nanostructure and also result in the desired combination of functional and mechanical properties.

show abstract

Section: Resultsmentioning

confidence: 68%