Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode

Gahan, David; Dolinaj, Borislav; Hopkins, M. B.

doi:10.1063/1.2890100

Cited by 129 publications

(118 citation statements)

References 31 publications

Supporting

Mentioning

111

Contrasting

Order By: Relevance

“…The kinetic energy E i and flux C i of ions accelerated to the substrate surface were studied using an Impedans Semion retarding field energy analyzer (RFEA) 5 and a tungsten planar current collecting probe, respectively. Using the RFEA the flux of ions passing through a system of biased grids was measured, from which the ion energy distribution (IED) was determined.…”

Section: Methodsmentioning

confidence: 99%

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

Profijt

Kudlacek

Sanden

et al. 2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

The influence of ions and photons during remote plasma atomic layer deposition (ALD) of metal oxide thin films was investigated for different O 2 gas pressures and plasma powers. The ions have kinetic energies of 35 eV and fluxes of $10 12 -10 14 cm À2 s À1 toward the substrate surface: low enough to prevent substantial ion-induced film damage, but sufficiently large to potentially stimulate the ALD surface reactions. It is further demonstrated that 9.5 eV vacuum ultraviolet photons, present in the plasma, can degrade the electrical performance of electronic structures with ALD synthesized metal oxide films.

show abstract

Section: Methodsmentioning

confidence: 99%

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

Profijt

Kudlacek

Sanden

et al. 2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…For the ion energy and ion flux measurements, an Impedans Semion retarding field energy analyzer (RFEA) was employed, placed on the substrate stage. 18 Optical emission measurements were performed using an OceanOptics UBS4000-UV-VIS spectrometer (200-850 nm wavelength range) through a quartz window, aligned at approximately 1 cm above the substrate stage. 19 It is noted that it was verified that the plasma did not significantly heat the samples during the deposition process using a thermocouple connected to the substrate stage.…”

Section: B Substrate-tuned Biasing and Rf Biasingmentioning

confidence: 99%

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Profijt

Sanden

Kessels

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to −200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al2O3, Co3O4, and TiO2 thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al2O3 films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.

show abstract

“…2,12 Figure 2 displays the IEDFs measured for substrate-tuned bias voltages between 0 and −100 V. The inset of this figure shows the average ion energy deduced from the IEDFs. For the case of a grounded substrate stage (i.e.…”

mentioning

confidence: 99%