Rethinking polarization in wurtzite semiconductors

Abstract

Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)—the most produced semiconductor materials second only to silicon. However, recent direct experimental measurements unveiled remanent polarization of unexpectedly large magnitudes and opposite orientations to traditionally anticipated. This significant discrepancy not only poses a formidable challenge to our existing theoretical paradigms but also accentuates the need for a critical rethinking and methodological refinement to integrate these emerging observations with established knowledge, mitigating potential misunderstandings and misconceptions in this rapidly evolving field.