RETRACTED: Solution processed CdS thin film transistors

Schön, J. H.; Schenker, O.; Batlogg, B.

doi:10.1016/s0040-6090(00)01908-8

Cited by 46 publications

(17 citation statements)

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“…Cadmium sulphide (CdS), a wide energy gap semiconductor has emerged as an important material due to its applications in photovoltaic cell as window layers [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], optical filters and multilayer light emitting diodes [6], photo detectors [15], thin film field effect transistors [15,20,21], gas sensors [21], and transparent conducting semiconductor for optoelectronic devices [22]. CdS is naturally an n-type material with an optical band gap of 2.4 eV [23,24] employed for depositing CdS thin films are chemical vapour transport [22], vacuum evaporation [13,15,23,26], spray pyrolysis [25,27], electrodeposition [12,[28][29][30], pulsed laser deposition [30], sputtering [31], and chemical bath deposition (CBD) [2,4,5,7,8,…”

Section: Introductionmentioning

confidence: 99%

“…CdS is naturally an n-type material with an optical band gap of 2.4 eV [23,24] employed for depositing CdS thin films are chemical vapour transport [22], vacuum evaporation [13,15,23,26], spray pyrolysis [25,27], electrodeposition [12,[28][29][30], pulsed laser deposition [30], sputtering [31], and chemical bath deposition (CBD) [2,4,5,7,8,10,[16][17][18][19][20][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] technique. Of the various methods, CBD technique has many advantages such as simplicity, no requirement for sophisticated instruments, minimum material wastage, economical way of large area deposition, and no need of handling poisonous gases [44].…”

Section: Introductionmentioning

confidence: 99%

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CdS thin films from two different chemical baths—structural and optical analysis

Prabahar¹,

Dhanam²

2005

Journal of Crystal Growth

168

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

CdS thin films from two different chemical baths—structural and optical analysis

Prabahar¹,

Dhanam²

2005

Journal of Crystal Growth

168

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“…There is more charge trapping due to the larger number of grain boundaries, meaning that a higher voltage is required to turn on the device. 35,36 Also, V T increases with decreasing ZnO film thickness (or increasing deposition pressure). Such an effect has already been observed in previous reports.…”

Section: Resultsmentioning

confidence: 98%

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

Medina-Montes

Lee

Perez

et al. 2011

Journal of Elec Materi

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In this work we present the electrical characterization of ZnO-based thin-film transistors fabricated at room temperature. The ZnO films were deposited by radiofrequency magnetron sputtering at variable argon pressure (3 mTorr to 10 mTorr) at room temperature. The sputtered ZnO films were polycrystalline with hexagonal structure and electrical resistivity ranging from 10 1 X cm to 10 8 X cm for films deposited from 3 mTorr to 10 mTorr. The trend in the electrical behavior of the devices was found to be due to the variation of the electron concentration of the ZnO films. The devices with better performance showed a field-effect mobility of 2.9 cm 2 /Vs, threshold voltage of 20 V, I on / I off % 10 6 , and electrical resistivity of $10 8 X cm. In addition, linear behavior of I on /I off with deposition pressure was observed. The lowest I on /I off ratio ($2) was calculated for devices with ZnO layers deposited at 3 mTorr, and the highest ratio ($10 6 ) for devices processed at 10 mTorr. Hall-effect measurements were performed on ZnO films showing the lowest resistivity. The layer grown at 3 mTorr showed a Hall mobility of l H = 8.9 cm 2 /Vs and carrier concentration of n = 4.2 9 10 16 cm À3 with resistivity of q = 31.8 X cm. For films deposited at 5 mTorr, the Hall mobility, carrier concentration, and resistivity were l H = 7.9 cm 2 /Vs, n = 3.4 9 10 16 cm À3 , and q = 38.4 X cm, respectively. Films deposited at 8 mTorr and 10 mTorr could not be measured due to their high resistance.

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“…One-dimensional nanostructured materials have gained special interest in the assembly of nanodevices [1][2][3]. Nanometer-scale electronics have been predicted to play an important role in device technology [4,5]. Quantum wires of semiconductors [6] and metallic alloys [7] have found to exhibit interesting magnetic and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealed Temperature on Optical Properties of Nanostructured CdO Thin Films

Ghosh¹

2017

AJOP

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Nanostructures of cadmium oxide (CdO) thin films were deposited by sol-gel dip coating technique on glass and Si substrates. X-ray diffraction patterns and selected area electron diffraction patterns confirmed the nanocrystalline cubic CdO phase formation. Transmission Electron Micrograph (TEM) of the film revealed the manifestation of nano CdO phase with average particle size lies in the range 1.6 nm to 9.3 nm. From the measurements of transmittance spectra of the films the direct allowed bandgap values have been calculated and they lie in the range 2.85 eV to 3.69 eV with high transparency (~ 75% in the wavelength range 500 -800 nm) of the film. Particle size have also been calculated from the shift of bandgap from that of bulk value for those films for which the particles are compearable to Bohr exitonic radius.

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RETRACTED: Solution processed CdS thin film transistors

Cited by 46 publications

References 0 publications

CdS thin films from two different chemical baths—structural and optical analysis

CdS thin films from two different chemical baths—structural and optical analysis

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

Influence of Annealed Temperature on Optical Properties of Nanostructured CdO Thin Films

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