RETRACTED: Tunable electronic and optical properties of 2D PtS2/MoS2 van der Waals heterostructure

Almayyali, Ali Obies Muhsen; Kadhim, Bahjat B.; Jappor, Hamad Rahman

doi:10.1016/j.physe.2019.113866

Cited by 41 publications

(14 citation statements)

References 81 publications

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“…The calculated electrostatic potential unveils the potential difference can make a built-in electric field to make charge transfer feasible. To date, vdW PbI 2 /PtS 2 , PtS 2 /MoS 2 , , MoSe 2 /PtS 2 , graphene/PtS 2 , PtS 2 /InSe, PtS 2 /PtSe 2 , etc. have demonstrated excellent electronic and optical properties for photodetectors, solar cells, FET, and other optoelectronics.…”

Section: Carbon Nitride–chalcogenide 2d/2d Vdw Structuresmentioning

confidence: 99%

Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions

et al. 2021

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The surging demand for energy and staggering pollutants in the environment have geared the scientific community to explore sustainable pathways that are economically feasible and environmentally compelling. In this context, harnessing solar energy using semiconductor materials to generate charge pairs to drive photoredox reactions has been envisioned as a futuristic approach. Numerous inorganic crystals with promising nanoregime properties investigated in the past decade have yet to demonstrate practical application due to limited photon absorption and sluggish charge separation kinetics. Two-dimensional semiconductors with tunable optical and electronic properties and quasi-resistance-free lateral charge transfer mechanisms have shown great promise in photocatalysis. Polymeric graphitic carbon nitride (g-C3N4) is among the most promising candidates due to fine-tuned band edges and the feasibility of optimizing the optical properties via materials genomics. Constructing a two-dimensional (2D)/2D van der Waals (vdW) heterojunction by allies of 2D carbon nitride sheets and other 2D semiconductors has demonstrated enhanced charge separation with improved visible photon absorption, and the performance is not restricted by the lattice matching of constituting materials. With the advent of new 2D semiconductors over the recent past, the 2D/2D heterojunction assemblies are gaining momentum to design high performance photocatalysts for numerous applications. This review aims to highlight recent advancements and key understanding in carbon nitride based 2D/2D heterojunctions and their applications in photocatalysis, including small molecules activation, conversion, and degradations. We conclude with a forward-looking perspective discussing the key challenges and opportunity areas for future research.

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Section: Carbon Nitride–chalcogenide 2d/2d Vdw Structuresmentioning

confidence: 99%

Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions

et al. 2021

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“…On the other hand, two dimensional (2D) materials, have attracted considerable attention due to their exceptional properties such as tunable optoelectronic properties, good mechanical properties, superior electron carrier mobility, good gas sensing, high surface-volume ratio, etc. [29][30][31][32][33][34][35][36] Meanwhile, the thermoelectric efficiency, electrochemical and photoresponse properties of a number of 2D materials were estimated first theoretically. 37 Among these 2D materials, Bi 2 X 3 (X= S, Se, Te) monolayers show interesting properties and thus can be used in spintronic devices, 38 construction of high-performance thermoelectric devices, 39 supercapacitors, 40 and nanoscale photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Prediction of two-dimensional bismuth-based chalcogenides Bi₂X₃(X = S, Se, Te) monolayers with orthorhombic structure: a first-principles study

Bafekry¹,

Fadlallah²,

Jappor³

et al. 2021

J. Phys. D: Appl. Phys.

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First-principles calculation is a very powerful tool for discovery and design of novel twodimensional materials with unique properties needed for the next generation technology. Motivated by the successful preparation of Bi2S3 nanosheets with orthorhombic structure in the last year [K. A. Messalea et al., Adv. Mater. Interfaces 7, 2001131 (2020)] herein we gain a deep theoretical insight into the crystal structure, stability, electronic and optical properties of Bi2X3 (X=S, Se, Te) monolayers of orthorhombic phase employing the first-principles calculations. The Molecular dynamics study, phonon spectra, criteria for elastic stability, and cohesive energy results confirm the desired stability of the Bi2X3 monolayers. From S, to Se and Te, the work function value as well as stability of the systems decrease due to the decline in electronegativity. Mechanical properties study reveals that Bi2X3 monolayers have brittle nature. The electronic bandgap values of Bi2S3, Bi2Se3 and Bi2Te3 monolayers are predicted by the HSE06 functional to be 2.05 eV, 1.20 eV and 1.16 eV, respectively. By assessing the optical properties, it has been found that Bi2X3 monolayers can absorb ultraviolet light. The high in-plane optical anisotropy offers an additional degree of freedom in the design of optical devices. The properties revealed in our survey will stimulate and inspire the search for new approaches of orthorhombic Bi2X3 (X=S, Se, Te) monolayers synthesis and properties manipulation for fabrication of novel nanoelectronic and optoelectronic devices.

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“…Due to the synergistic effect of strong electron scattering, low carrier mobility in normal semiconductors, and increased working temperature, the effective photocurrent (I ph ) is quite faint for imaging or target identification [7][8][9][10]. Otherwise, the spectra response range is the primary parameter for SWIR photodetection, which always requires a narrow bandgap and wide spectra adsorption [11][12][13][14][15][16]. Hence, high mobility, high quality, and wide spectra response are key factors for the next generation of SWIR photodetectors with high temperature tolerance [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

et al. 2022

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A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

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RETRACTED: Tunable electronic and optical properties of 2D PtS2/MoS2 van der Waals heterostructure

Cited by 41 publications

References 81 publications

Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions

Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions

Prediction of two-dimensional bismuth-based chalcogenides Bi₂X₃(X = S, Se, Te) monolayers with orthorhombic structure: a first-principles study

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

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RETRACTED: Tunable electronic and optical properties of 2D PtS2/MoS2 van der Waals heterostructure

Cited by 41 publications

References 81 publications

Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions

Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions

Prediction of two-dimensional bismuth-based chalcogenides Bi2X3(X = S, Se, Te) monolayers with orthorhombic structure: a first-principles study

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

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Prediction of two-dimensional bismuth-based chalcogenides Bi₂X₃(X = S, Se, Te) monolayers with orthorhombic structure: a first-principles study