Reusability of nanostencils for the patterning of Aluminum nanostructures by selective wet etching

Vazquez-Mena, Oscar; Villanueva, G.; Boogaart, M A F van den; Savu, Veronica; Brugger, Jürgen

doi:10.1016/j.mee.2007.12.083

Cited by 33 publications

(33 citation statements)

References 12 publications

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“…19,26,29,30 In particular stencils containing nanoapertures have been used up to 12 times for Al depositions without showing any degradation or damage on the membranes. 29 The fabrication of stencils with silicon nitride membranes is based on conventional silicon microfabrication techniques. Once the stencil has been fabricated, it makes the patterning of metals simpler than using resist-based methods such as lift-off or metal etching.…”

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Metallic Nanowires by Full Wafer Stencil Lithography

et al. 2008

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Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resistivity of the wires were studied. Nanowires down to 70 nm wide and 5 µm long have been achieved showing a resistivity of 10 µΩcm for Al and 5 µΩcm for Au and maximum current density of ∼10 8 A/cm 2 . This proves the capability of stencil lithography for the fabrication of metallic nanowires on a full wafer scale.An important objective in nanotechnology is the development of alternative nanopatterning methods and the fabrication of novel nanoscale structures and materials. Among such structures, nanowires (NWs) have shown potential and applications in a broad range of fields such as electronics, 1,2 magnetic memories, 3 thermoelectric, 4,5 nanomechanical, 6 optoelectronic, 7 and biosensing devices 8-10 due to their physical properties and surface to volume ratio. In particular, metallic nanowires can be applied for interconnects, magnetic memories based on spin-polarized current 3 and biosensors. 9 To fabricate NWs, the two approaches used are the chemical synthesis (bottom-up) and the nanopatterning methods (topdown).

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Metallic Nanowires by Full Wafer Stencil Lithography

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“…We believe that the flux of material through the nanoapertures is lower compared to the micron-sized apertures. Due to clogging (reduction in size aperture due to material deposition), the width of the apertures is also gradually decreased during evaporation [13,16]. This reduces the amount of material passing through the apertures, thus affecting the thickness of the deposited structures.…”

Section: Nanowire Fabricationmentioning

confidence: 99%

“…After the Al removal, the aperture recovers its original width and the stencil remains intact without any observable damage. Using the same Al removal procedure, we have been able to use the same stencil (used for these experiments) 12 times so far, achieving sub-100 nm Al nanowires [13]. VI.…”

Section: Reusability Of Stencilmentioning

confidence: 99%

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Sub-100 nm-scale aluminum nanowires by stencil lithography: Fabrication and characterization

Vazquez-Mena

Savu

Sidler

et al. 2008

2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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Abstract-We present the fabrication process and electrical characterization of sub-100 nm scale Al nanowires (NWs) fabricated by stencil lithography (SL). We use a stencil with sub-100 nm wide nanoslits patterned by focused ion beam (FIB) milling. The stencil is aligned and clamped onto a substrate containing predefined electrical contacts. Then a 60 nm-thick layer of Aluminum (Al) is deposited through the stencil producing NWs with lengths of ~1, 2 and 5 µm and widths down to 65 nm. The NWs show an ohmic behavior with values varying from 30 Ω up to 300 Ω, depending on the dimensions of the structures. We have extracted a resistivity for the Al NWs of ~10 x 10 -8 Ωm. We also show that stencils can be cleaned and reused, proving that SL is a cost-efficient and scalable manufacturing method for the direct fabrication of metallic NWs on a full wafer scale.

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“…It is suitable for patterning on substrates with high topographies, fragile structures and with materials damaged by radiation or solvents. SL also offers the potential for rapid nanopatterning of structures using the stencils several times [3]. However, SL still faces challenges for nanopatterning, like the blurring of the deposited structures due to the stencil-substrate gap [4].…”

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Analysis and applications of nanostructures created by stencil lithography

Vazquez-Mena

Sannomiya

Tosun

et al. 2009

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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Stencil Lithography (SL) is a technique based on shadow mask deposition that does not require any resist processing, energy radiation or chemical solvents. This technique has been used to fabricate sub-micrometric structures, like nanodots [1] and nanowires [2]. It is suitable for patterning on substrates with high topographies, fragile structures and with materials damaged by radiation or solvents. SL also offers the potential for rapid nanopatterning of structures using the stencils several times [3]. However, SL still faces challenges for nanopatterning, like the blurring of the deposited structures due to the stencil-substrate gap [4]. Herein we show advances in the analysis, characterization and application of nanostructures deposited by SL.In this contribution, we present a quantitative study of the blurring as a function of the gap. We show the patterning and electrical characteristics of Au nanowires deposited on polymer substrates by SL. Finally, we present the fabrication of Au nanodots and their use as biosensors based on localized surface plasmon resonance (LSPR) [5]. The stencils used for these experiments consist on silicon wafers with 100 nm thick low stress silicon nitride membranes containing nanoapertures.The blurring in SL is due to the gap between stencil and substrate. To study this relation, we fabricated stencils with membranes having steps (with apertures) as shown in Figure 1.a. This allows us to have different and controlled gaps in a single evaporation with the same stencil. By depositing 60 nm of Al through nanoslits located at different steps of the membranes, nanowires were formed on the substrate. and thickness, are plotted as a function of the gap in Figure 1.f. It can be observed that for a gap of ~40µm, the blurring is about 80nm and the thickness reduced to ~50% of the nominal deposited thickness.Using normal stencils (flat membranes), we have created nanowires (NW) and nanodot arrays. By depositing 45nm of Au through stencils containing nanoslits, we fabricated Au NWs on different polymer substrates: polyimide (PI), parylene and SU-8. The nanowires are deposited between predeposited Au electrodes to allow electrical measurements. We obtained wires up to 20µm long and 80nm wide as illustrated in Figure 2. The resistance as a function of width is shown in Figure 3. The resistivity obtained is ~10 µΩcm for parylene and SU-8, and ~7.5µΩcm for PI. These values are higher than bulk value (2.5µΩcm) due to size effects (grain and surface scattering).We also used stencils with 50nm diameter holes to deposit arrays of 65nm diameter, 80nm thick Au nanodots ( Figure 4.a and b). The total size of the array is ~20µm. We measured the extinction spectra due to LSPR (Figure 4.c) for arrays with different spacing between the nanodots, showing a resonance peak at 800nm. These structures were used to perform biosensing measurements based on the shift of the LSPR peak when biomolecules are added to metallic nanostructures. As expected, Figure 4.d shows a peak shift when biotin (PLL-PEG-biotin) ...

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Reusability of nanostencils for the patterning of Aluminum nanostructures by selective wet etching

Cited by 33 publications

References 12 publications

Metallic Nanowires by Full Wafer Stencil Lithography

Metallic Nanowires by Full Wafer Stencil Lithography

Sub-100 nm-scale aluminum nanowires by stencil lithography: Fabrication and characterization

Analysis and applications of nanostructures created by stencil lithography

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