Revealing intrinsic electro-optic effect in single domain Pb(Zr, Ti)O3 thin films

et al. 2022

Self Cite

The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.

Section: Methodsmentioning

confidence: 99%

Effect of Ni doping on the electro-optic property in K(Ta_0.6Nb_0.4)O₃ films

Yuan

Sakurai

et al. 2022

Self Cite

“…The details of the setup are available in our previous reports. 14,48,49) The incident laser light was a polarized He-Ne laser with a wavelength of 632.8 nm, and both incident and polarization angles were fixed at 45°. We applied a sinusoidal field E AC at 10 kHz to the samples using a function generator (NF Electronic Instruments, 1941).…”

Section: Methodsmentioning

confidence: 99%

Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO₂ ferroelectric thin films

Shimura

Teranishi

et al. 2021

Recently, we reported linear electro-optic (EO) effects in (100)-epitaxial yttrium-doped hafnium dioxide (Y-HfO 2 ) ferroelectric thin films. In this study, we have investigated the influence of orientation on the EO effect in Y-HfO 2 thin-film. (111)-epitaxial undoped HfO 2 and Y-HfO 2 films were deposited on Sn-doped In 2 O 3 /yttria-stabilized zirconia (111) substrates at room temperature through radiofrequency magnetron sputtering. Although the undoped HfO 2 film showed typical paraelectric characteristics, ferroelectricity was observed in the (111)-Y-HfO 2 film. Remnant polarization in the (111)-Y-HfO 2 film was higher than that in the (100)-Y-HfO 2 film. The (111)-Y-HfO 2 film exhibited a linear EO effect based on ferroelectricity, which is consistent with that of the (100)-Y-HfO 2 film. The average EO coefficient r c of the (111)-Y-HfO 2 film was 0.67 pm V −1 , which is higher than that of the (100)-Y-HfO 2 film. This result is reasonable considering the difference in remnant polarization between the (100)-Y-HfO 2 and (111)-Y-HfO 2 films.

“…An undoped HfO 2 film and a Y-doped HfO 2 film were fabricated on 10 wt% Sn-doped In 2 O 3 (ITO)(100)/yttriastabilized zirconia (YSZ)(100) substrates at room temperature in a 10 mTorr Ar atmosphere by RF magnetron sputtering. Here, YSZ substrates were employed to characterize the EO properties using the in-house modulation ellipsometry, 31,32) for which the detailed experimental setup is described below, although the films need to be grown on Si for practical EO devices integrated with Si photonics. HfO 2 and 7%YO 1.5 -93%HfO 2 ceramic targets were used for the respective film depositions.…”

mentioning

confidence: 99%

Linear electro-optic effect in ferroelectric HfO₂-based epitaxial thin films

Shimura

Teranishi

et al. 2021

Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOS-compatible EO devices.