2023
DOI: 10.1002/smll.202300824
|View full text |Cite
|
Sign up to set email alerts
|

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Abstract: Complex oxide films stabilized by epitaxial growth can exhibit large populations of point defects which have important effects on their properties. The site occupancy of pulsed laser-deposited epitaxial terbium iron garnet (TbIG) films with excess terbium (Tb) is analyzed, in which the terbium:iron (Tb:Fe) ratio is 0.86 compared to the stoichiometric value of 0.6. The magnetic properties of the TbIG are sensitive to site occupancy, exhibiting a higher compensation temperature (by 90 K) and a lower Curie temper… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

2
1
0

Year Published

2024
2024
2025
2025

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(3 citation statements)
references
References 76 publications
2
1
0
Order By: Relevance
“…Our observation strongly hints at the presence of only one Fe oxidation state, namely the Fe 3+ ion, and hence, we can rule out the contribution of single ion anisotropy of Fe 2+ ions toward the increased magnetic anisotropy. This is also in agreement with recent studies on Tb-rich TbIG thin films , which reveal very low Fe 2+ ion concentrations. Therefore, the increase in H K eff below 200 K in the TmIG films may arise from single-ion anisotropies of the Tm 3+ and Fe 3+ ions as well as from the enhanced contributions of K 1 and K me toward K eff at low temperatures. …”
Section: Resultssupporting
confidence: 93%
See 1 more Smart Citation
“…Our observation strongly hints at the presence of only one Fe oxidation state, namely the Fe 3+ ion, and hence, we can rule out the contribution of single ion anisotropy of Fe 2+ ions toward the increased magnetic anisotropy. This is also in agreement with recent studies on Tb-rich TbIG thin films , which reveal very low Fe 2+ ion concentrations. Therefore, the increase in H K eff below 200 K in the TmIG films may arise from single-ion anisotropies of the Tm 3+ and Fe 3+ ions as well as from the enhanced contributions of K 1 and K me toward K eff at low temperatures. …”
Section: Resultssupporting
confidence: 93%
“…The decrease in M S at low T is well-known in TmIG , and is a result of the increasing moment of the Tm 3+ ion at low T , which competes with the net moment of the Fe 3+ ions (i.e., the dodecahedral Tm 3+ moment opposes the net moment of the tetrahedral and octahedral Fe 3+ moments). Based on the molecular-field-coefficient theory developed by Dionne, we have performed molecular-field simulations , to determine M S ( T ) for TmIG (see Supplementary Figure 3n) which is consistent with our experimental observation of the decrease in M S at low T . It is apparent from Figure c,d that the temperature evolution of V ISHE signal follows that of M S .…”
Section: Resultssupporting
confidence: 74%
“…A series of (Eu x Tm 1- x ) 3 IG films with a thickness of 16–40 nm were grown on (111) GGG by pulsed laser codeposition 27 . By fitting the high-resolution X-ray diffraction (HRXRD) symmetric scans about the (444) reflection (Fig.…”
Section: Resultsmentioning
confidence: 99%