Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Coletti, Camilla; Forti, Stiven; Principi, Alessandro; Emtsev, K. V.; Zakharov, Alexei; Daniels, Kevin M.; Daas, B. K.; Chandrashekhar, M. V. S.; Ouisse, T.; Chaussende, Didier; MacDonald, Allan H.; Polini, Marco; Starke, Ulrich

doi:10.1103/physrevb.88.155439

Cited by 85 publications

(104 citation statements)

References 34 publications

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“…Very recently Mammadov et al 14 performed a systematic study of this correlation to find that the graphene doping was around 1.5 times larger in 4H than in 6H samples (see Table I), regardless of the substrate's doping level. Notably, similar doping levels are found for bilayer 14 and even trilayer 15 graphene, since in such multilayer systems the spacing between the occupied π bands is sufficiently large so that only the uppermost one becomes doped 14 . Although the possibility of tuning the doping of the graphene layer across such a wide energy range (equivalent to hole concentrations of up to 2 e × 10 13 cm −2 ) is a key issue for the fabrication of QFG-based elements, in detail from the theoretical side for both free-standing graphene (FG) [22][23][24] and QFG 24 .…”

Section: Introductionsupporting

confidence: 68%

Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces

Sławińska

Aramberri

Muñoz

et al. 2015

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Quasi-free standing graphene (QFG) obtained by the intercalation of a hydrogen layer between a SiC surface and the graphene is recognized as an excellent candidate for the development of graphene based technology. In addition, the recent proposal of a direct equivalence between the p-type doping typically found for these systems and the spontaneous polarization (SP) associated to the particular SiC polytype, opens the possibility of tuning the number of carriers in the Dirac cones without the need of external gate voltages. However, first principles calculations which could confirm at the atomic scale the effect of the SP are lacking mainly due to the difficulty of combining a bulk property such as the SP with the surface confined graphene doping. Here we develop an approach based on standard density functional theory (DFT) slab calculations in order to quantify the effect of the SP on the QFG doping level. First, we present an accurate scheme to estimate the SPs by exploiting the dependence of the slab's dipole moment with its thickness. Next, and in order to circumvent the DFT shortcomings associated to polar slab geometries, a double gold layer is attached at the C-terminated bottom of the slab which introduces a metal induced gap state that pins the chemical potential inside the gap thus allowing a meaningful comparison of the QFG dopings among different polytypes. Furthermore, the slab dipole can be removed after adjusting the Au-Au interlayer distances. Our results confirm that the SP does indeed induce a substantial p-doping of the Dirac cones which can be as large as a few hundreds of meV depending on the hexagonality of the polytype. The evolution of the doping with the slab thickness reveals that several tens of SiC bilayers are required to effectively remove the depolarization field and recover the macroscopic regime whereby the graphene doping should equal the SP.

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Section: Introductionsupporting

confidence: 68%

Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces

Sławińska

Aramberri

Muñoz

et al. 2015

Carbon

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“…We resolved the ABA and ABC stacking orders completely and obtained very clean and high quality electronic bands compared to previous reports. 31,32 We also obtained the band structure of AAA stacked trilayer graphene for the first time. The hopping parameters are extracted using tight-binding fitting.…”

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confidence: 99%

Stacking-Dependent Electronic Structure of Trilayer Graphene Resolved by Nanospot Angle-Resolved Photoemission Spectroscopy

et al. 2017

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The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (µm or nm scale) to be † The authors declare no competing financial interest. 1 arXiv:1702.08307v1 [cond-mat.mtrl-sci]

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“…Synthesized graphene is generally comprised of different kinds of domain due to the tiny difference between the total energies of the different configurations. Infrared spectroscopy, transmission electron microscopy (TEM) [3][4][5]34], scanning tunneling microscopy (STM) and spectroscopy (STS) [6-9, 11, 35-37], angle-resolved photoemission spectroscopy (ARPES) [68][69][70][71][72][73][74], and Raman spectroscopy [10,75,76], can be used to visualize the stacking domains with nanometric resolution for cases of tri-, tetra-and pentalayer graphene with typical or intermediate configurations.…”

Section: Introductionmentioning

confidence: 99%

“…AA [78][79][80], AB [81][82][83][84][85][86][87][88][89][90][91][92][93], ABC [93][94][95][96][97][98][99] and AAB [64], are predicted to display unique electronic energy dispersions. This new material holds great promise for the development of next-generation electronic and optoelectronic nanodevices [41-47, [50][51][52][53][54][55][56] because the electronic and optical properties can be flexibly tuned by the application of external fields [64][65][66][67][68][69][70][71][72][73][74] as well as changes to the geometric structures and dopants [115][116][117][118][119][120]…”

Section: Introductionmentioning

confidence: 99%

Introduction

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Do²,

Huang³

et al. 2017

Optical Properties of Graphene in Magnetic and Electric Fields

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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Abstract: International audienceno abstrac

Cited by 85 publications

References 34 publications

Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces

Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces

Stacking-Dependent Electronic Structure of Trilayer Graphene Resolved by Nanospot Angle-Resolved Photoemission Spectroscopy

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