The
p-type semiconducting colloidal quantum dot (CQD), working
as a hole conductor in CQD solar cells (CQDSCs), is critical for charge
carrier extraction and therefore, to large extent, determines the
device’s photovoltaic performance. However, during the preparation
of a p-type CQD solid film on the top of an n-type CQD solid film,
forming a p-n heterojunction within the CQDSCs, the optoelectronic
properties of the underlayered n-type CQD solid film are significantly
affected by conventional 1,2-ethanedithiol (EDT) ligands due to its
high reactivity. Herein, a series of thiol ligands are comprehensively
studied for p-type CQDs, which suggests that, by finely controlling
the interaction between the CQDs and thiol ligands during the preparation
of p-type CQD solid films, the n-type CQD solid films can be well
protected and avoid destruction induced by thiol ligands. The p-type
CQD solid film with 4-aminobenzenethiol (ABT) passivating the CQD
surface exhibits better optoelectronic properties than the conventional
p-type EDT-based CQD solid films, resulting in an improved photovoltaic
performance in CQDSCs.