Reverse I-V characteristics of Au/semi-insulating InP (100)

Abstract

The I-V characteristics of Aulsemi-insulating InP (100) under reversed bias have been measured between 230 K and '290 K. A simple model based on the thermionic field emission theory (TFE) is proposed to describe this system. Based on this model, the value of the bandgap obtained from the C V characteristics is in reasonable agreement with the literature. At room temperature, the corresponding fitted values of the barrier height Qb and the series bulk resistance R, are 0.68 0.05V and 1.32 x IO'R respectively.

Positron transport studies at the Au - (InP:Fe) interface

“…Two major questions emerge from the results, namely why is there no observation of a microvoid lifetime component associated with annihilations from the Au-InP:Fe interface when the electric field is directed towards it and why the observed positron mobility is independent of temperature. In an attempt to answer these questions we first review a recent finding regarding current transport through the Au-InP:Fe interface that suggests that significant band-bending occurs at such contacts when they are under bias [12]. Lee et al [12] discovered that the reverse I -V characteristics of the Au-InP:Fe(100) system were accurately those expected for a Schottky contact, subject to thermionic field emission (TFE) current flow, in series with the bulk resistance R b of the compensated bulk semi-insulator.…”

“…In an attempt to answer these questions we first review a recent finding regarding current transport through the Au-InP:Fe interface that suggests that significant band-bending occurs at such contacts when they are under bias [12]. Lee et al [12] discovered that the reverse I -V characteristics of the Au-InP:Fe(100) system were accurately those expected for a Schottky contact, subject to thermionic field emission (TFE) current flow, in series with the bulk resistance R b of the compensated bulk semi-insulator. The reverse-biased current I r through the interface was accordingly found to be given by the TFE theory of Padovani and Stratton [13] through solution of the equation [12]…”

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

“…Lee et al reported a thermionic field emission model for a reverse-biased Schottky diode on high resistivity material [40]. The differential resistance for these devices suggests significant electron injection in forward bias, so modeling the devices in reverse bias may yield more accurate results.…”

“…Table 6.4 lists the voltage and temperature dependence of possible current mechanisms. The leaky Schottky barrier model uses thermionic field emission as the component for two reasons: Lee et al showed that this mechanism accurately modeled highresistivity GaAs (similar to high-resistivity CdTe) [40], and this current mechanism is controlled by the Schottky barrier height, as expected for these devices. Diffusion is also controlled by Schottky barrier height, but Kosyachenko et al indicated that this current is negligible [22].…”

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

“…Table 6.4 lists the voltage and temperature dependence of possible current mechanisms. The leaky Schottky barrier model uses thermionic field emission as the component for two reasons: Lee et al showed that this mechanism accurately modeled highresistivity GaAs (similar to high-resistivity CdTe) [40], and this current mechanism is controlled by the Schottky barrier height, as expected for these devices.…”