Reverse short-channel effects on threshold voltage in submicrometer salicide devices

Lu, Chih‐Yuan; Sung, J.M.

doi:10.1109/55.43095

Cited by 90 publications

(25 citation statements)

References 4 publications

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“…More interestingly, while the of SPC TFT's decreases monotonically with , that of MILC TFT's initially increases with before rolling off at m, thus manifesting R-SCE. R-SCE, due to defect enhanced lateral diffusion [7], [8], has been observed in scaled metal-oxide-semiconductor fieldeffect transistors (MOSFET's) realized on single-crystalline substrates. However, because of the transient nature of the underlying mechanism [8] the much lower device processing temperature makes it unlikely that transient enhanced diffusion is similarly responsible for the observed R-SCE in MILC TFT's.…”

Section: Methodsmentioning

confidence: 99%

Reverse short-channel effect in metal-induced laterally crystallized polysilicon thin-film transistors

Wong

Bhat²,

Kwok³

1999

IEEE Electron Device Lett.

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Abstract-A reverse short-channel effect, manifested by an increase in the transistor threshold voltage as the channel length is reduced, is observed in conventional metal-induced laterally crystallized thin-film transistors. Such an effect has not been observed in regular solid phase crystallized thin-film transistors and can be eliminated by a brief hydrogen plasma treatment.Index Terms-MILC, short channel effect, thin film transistor.

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Section: Methodsmentioning

confidence: 99%

Reverse short-channel effect in metal-induced laterally crystallized polysilicon thin-film transistors

Wong

Bhat²,

Kwok³

1999

IEEE Electron Device Lett.

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“…There are still other factors such as annealing (Wensheng et al, 2003) and salicide (Lu and Sung, 1989) within front end processes affecting the RSCE. Under these circumstances, it is quite difficult to have a precise scheme based on all the physical mechanisms and process parameters to let the device engineers tune their MOSFETs' V t characteristics accurately.…”

Section: Introductionmentioning

confidence: 98%

On the reverse short‐channel effect and threshold voltage roll‐off controls for 90 nm node MOSFETs

Chen

Lin

et al. 2007

Journal of the Chinese Institute of Engineers

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2007) On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs, Journal of the Chinese Institute of Engineers, 30:5, 847-853, ABSTRACTIn order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (V t ) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect V t variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required V t characteristics.

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“…This paper presents a new technique for improving the write margin and read performance of 8T subthreshold SRAMs without requiring any additional supply voltage or extra circuitry. We utilize the pronounced Reverse Short Channel Effect (RSCE) [5][6] [7] in the subthreshold region to increase the strength of write access devices. By simply using longer channel length access devices, the threshold voltage is reduced and the current drivability is improved due to the exponential dependency of current on threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

Kim

Liu

Kim

2007

2007 IEEE Custom Integrated Circuits Conference

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We propose a technique for improving write margin and read performance of 8T subthreshold SRAMs by using long channel devices to utilize the pronounced reverse short channel effect. Simulations show that the proposed cell at 0.2V has a write margin equivalent to a conventional cell at 0.27V. The Ion-to-Ioff ratio of the read path also improved from 169 to 271 and a 52% speedup for read was achieved. The cell area overhead was 20%.

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Reverse short-channel effects on threshold voltage in submicrometer salicide devices

Cited by 90 publications

References 4 publications

Reverse short-channel effect in metal-induced laterally crystallized polysilicon thin-film transistors

Reverse short-channel effect in metal-induced laterally crystallized polysilicon thin-film transistors

On the reverse short‐channel effect and threshold voltage roll‐off controls for 90 nm node MOSFETs

An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

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