Reversible and irreversible interface trap centres generated at high electric fields in MOS structures

Jastrzębski, Cezariusz; Strzałkowski, I.

doi:10.1016/s0026-2714(99)00305-4

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…At the same time different types of traps characterized by different density-of-states (DOS) profiles have been repeatedly reported in the literature (see e.g. [16][17][18]). Moreover, Hess et al [3,19] have explained different time slopes of degradation employing different types of defects, namely SE-and ME-induced; this concept is also supported by ab initio calculations [20].…”

Section: Introductionmentioning

confidence: 89%

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tyaginov

Starkov

Triebl

et al. 2010

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 89%

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tyaginov

Starkov

Triebl

et al. 2010

Microelectronics Reliability

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“…Therefore, n is usually described by a time dependent parameter such as reliability [92]. Operation conditions such as extreme conditions [93,94], radiation exposure [95,96], electrical stress [97] and thermal interactions [98] have strong effects on the degradation of the Schottky contact. Further examination of the original model would be a necessity.…”

Section: Parameter Identificationmentioning

confidence: 99%

Emerging technologies to power next generation mobile electronic devices using solar energy

Jia

Duan

Liu

2009

Front. Energy Power Eng. China

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Mobile electronic devices such as MP3, mobile phones, and wearable or implanted medical devices have already or will soon become a necessity in peoples' lives. However, the further development of these devices is restricted not only by the inconvenient charging process of the power module, but also by the soaring prices of fossil fuel and its downstream chain of electricity manipulation. In view of the huge amount of solar energy fueling the world biochemically and thermally, a carry-on electricity harvester embedded in portable devices is emerging as a most noteworthy research area and engineering practice for a cost efficient solution. Such a parasitic problem is intrinsic in the next generation portable devices. This paper is dedicated to presenting an overview of the photovoltaic strategy in the chain as a reference for researchers and practitioners committed to solving the problem.

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“…The major cause of the performance degradations is the generation of hot carriers by the high electric field at the junction [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Reliability of Microelectronic Devices From Emitterbase Junction Characterization

Tazbit

Mialhe

2008

The International Conference on Applied Mechanics and Mechanica

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The current-voltage characteristics of microelectronic devices are used to compare commercial components. A double exponential model (VDEM) introduces physical parameters to characterise the junction properties of bipolar transistor.The method leads to differentiate the high and low power operating modes of devices and shows that values of the junction parameters can be associated with each manufacture and related to quality and reliability control.

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Reversible and irreversible interface trap centres generated at high electric fields in MOS structures

Cited by 5 publications

References 9 publications

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Emerging technologies to power next generation mobile electronic devices using solar energy

Reliability of Microelectronic Devices From Emitterbase Junction Characterization

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