Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Wendel, Philipp; Dietz, Dominik; Deuermeier, Jonas; Klein, Andreas

doi:10.3390/ma14102678

Cited by 5 publications

(5 citation statements)

References 41 publications

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“…Notably, the off/on ratio was determined by dividing the high current by the low current at ∼1.5 V (Figure f). Similar conduction behavior was reported for ZnO/RuO 2 where the hysteretic behavior under positive bias was attributed to diode leakage caused by surface conduction . However, in our case, the distinct electronic transition causing resistance switching occurs at the coercive voltage and, therefore, is linked to the reversal of the ferroelectric polarization.…”

Section: Resultssupporting

confidence: 87%

“…Similar conduction behavior was reported for ZnO/RuO 2 where the hysteretic behavior under positive bias was attributed to diode leakage caused by surface conduction. 26 However, in our case, the distinct electronic transition causing resistance switching occurs at the coercive voltage and, therefore, is linked to the reversal of the ferroelectric polarization. Meanwhile, for the negative voltages, the resistance state stays high irrespective of polarization direction until the voltage reaches approximately −5.3 V at which the electrical current shows a sudden rise (arrow 2).…”

Section: ■ Introductionmentioning

confidence: 59%

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Polarity Control of the Schottky Barrier in Wurtzite Ferroelectrics

Zhang,

Ayana,

Webster

et al. 2024

ACS Appl. Electron. Mater.

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Memory devices with a high speed and low energy are highly desired for next-generation nanoelectronics. Here, using the switchable polarization in magnesium-substituted zinc oxide, a simple metal oxide with a polar wurtzite structure, the tunability of the Schottky barrier formed at the ferroelectric−metal interfaces is demonstrated. Through comprehensive analyses involving microstructural study and scanning probe microscopy, our work establishes the effect of magnesium doping, leading to the emergence of ferroelectricity and switchable polarization, in solution-processed zinc oxide films on glass substrates, demonstrated through both spectroscopic probing of piezoresponse and global poling techniques. Concomitantly, with magnesium doping, the electromechanical performance of the films is enhanced by ∼180%. Furthermore, doped films exhibit bias-dependent asymmetric resistive switching behavior attributed to the polarity-modulated back-to-back Schottky diode configuration leading to off/on resistance ratios of approximately 100. Our research findings unveil switchable polarization and a polarity-controlled Schottky barrier, and thus, modulation of electronic transport in solution-processed simple metal oxide films with a hexagonal wurtzite crystal structure thereby raises the translation prospects of ferroelectric electronic devices for information storage and memristive applications.

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Section: Resultssupporting

confidence: 87%

Section: ■ Introductionmentioning

confidence: 59%

Polarity Control of the Schottky Barrier in Wurtzite Ferroelectrics

Zhang,

Ayana,

Webster

et al. 2024

ACS Appl. Electron. Mater.

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“…[16] This is primarily attributed to their simple device structure, which allows for the adjustment of the Φ SBH . [14,15] A high Φ SBH has been found to be useful in reducing the dark current and thus enhancing detectivity. Nevertheless, typical Schottky photodiodes based on silicon have faced challenges in improving the metal diffusion at the contact interface of the Φ SBH .…”

Section: Introductionmentioning

confidence: 99%

Ultra‐High Detectivity MBene/Si vdW Schottky Photodiode for Color Single‐Pixel Imaging

Lu,

Guan,

Wang

et al. 2023

Advanced Optical Materials

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The color single‐pixel imaging (SPI) has received significant attention due to its ability to provide more comprehensive real‐world information compared to grayscale imaging. The performance of single‐pixel photodetector is the primary determinant for the quality of color SPI. Silicon‐based Schottky photodiodes provide desirable qualities for the essential requirements of high detectivity in high resolution color SPI. Herein, a novel Mo4/3B2‐XTZ/Si hexagonal micro‐hole array (SiHMA) van der Waals (vdW) Schottky photodiode is first constructed for application in color SPI. The resultant Schottky junction possesses a Schottky barrier height up to 1.18 eV, thus leading to a dark current density of 1.47 × 10−13 A cm−2 and an ultra‐high detectivity of 4.4 × 1014 Jones at zero bias voltage, which are superior to most of Si‐based Schottky photodiodes reported and even some commercial Si photodiodes thus far. Importantly, the high detectivity and low dark current density of the photodiode allow for the use as a photodetector in high resolution Hadamard SPI. Notably, a high‐quality 256 × 256‐pixel color image can be successfully achieved under even 25% sampling rate without an additional filter circuit. This work opens an avenue toward the fabrication of high detectivity Schottky photodiode for high quality color SPI.

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“…Schottky‐barrier diodes (SBDs) are appealing for self‐powered and high‐speed photodiode applications due to their simple device architecture, inexpensive fabrication process, and small device capacitance. [ 1,2 ] Among various semiconductors, silicon (Si) plays an important role in fabricating SBD photodetectors for wavelength ranging from 0.4 to 1.1 µm due to the mature process technology and the potential for large‐scale integration of photodetector networks with readout circuits. [ 3,4 ] The device performance of Si‐based SBD photodetectors is fundamentally determined by the Schottky barrier height (Ф B ) between the metallic electrode and Si.…”

Section: Introductionmentioning

confidence: 99%

“…Schottky-barrier diodes (SBDs) are appealing for self-powered and high-speed photodiode applications due to their simple device architecture, inexpensive fabrication process, and small device capacitance. [1,2] Among various semiconductors, silicon (Si) plays an important role in fabricating SBD photodetectors for wavelength ranging from 0.4 to 1.1 µm due to the mature terminations. [15] The adjustable work function, along with the unique dangling bond-free properties, makes the MXenes very attractive to form van der Waals (vdW) Schottky junctions with Si for high-performance self-powered SBDs.…”

Section: Introductionmentioning

confidence: 99%

High‐Barrier‐Height Ti₃C₂T_x/Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring

Song

et al. 2022

Adv Materials Technologies

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process technology and the potential for large-scale integration of photodetector networks with readout circuits. [3,4] The device performance of Si-based SBD photodetectors is fundamentally determined by the Schottky barrier height (Ф B ) between the metallic electrode and Si. A high Ф B is much desired for self-powered SBD photodetectors, because the large built-in electric field arising from the high Ф B could effectively enhance the separation and transportation of photo-generated carriers. According to the Schottky-Mott model, [5] the Ф B predominantly dependent on the metal function as well as the interface quality of the metal/semiconductor contact. Although a Ф B value up to 0.9 eV was achieved for these Si-based SBDs, they encounter similar challenges in terms of severe interface metal diffusion and low light transparency.Recently, a new class of 2D transition metal carbides and nitrides, called MXenes, [6] has spurred great research interest as promising building blocks for optoelectronic device applications. [7][8][9][10][11][12] Owing to the high conductivity (e.g., >10 4 S cm −1 for Ti 3 C 2 T x ), large specific area, and high transmittance, 2D MXene nanosheets have been widely used as transparent electrodes to construct MXene-related photodetectors through solution-processable approaches. [13,14] More importantly, the MXenes possess an adjustable work function in a wide range from 1.6 to 5.8 eV, depending on the various surface functional A high Schottky barrier height (Φ B ) is one of the essential prerequisites for achieving high-performance self-powered Schottky-barrier diode (SBD)based photodetector. The Φ B value is predominantly determined by the metal function and interface quality of the metal/semiconductor contact. 2D MXenes with adjustable work functions and dangling bond-free properties are promising building blocks for constructing self-powered SBD with high Φ B . Herein, a novel Ti 3 C 2 T x MXene/Si hexagonal microhole array (SiHMA) van der Waals SBD is developed for the first time via a feasible solution process. Significantly, the device possesses a large Φ B up to ≈1.07 eV, which is among the highest for the Si-based SBD. In consequence, the Ti 3 C 2 T x /SiHMA SBD yields a large responsivity up to 302 mA W −1 and detectivity as high as 5.4 × 10 13 Jones in a self-powered model, surpassing the performance of most 2D material/Si photodiodes reported to date. Furthermore, it is demonstrated that featured and reliable fingertip photoplethysmogram (PPG) signals can be detected using the self-powered SBD, enabling us to further accurately extract the heart rate (HR), and blood pressures (BP) using the PPG-only method. This work paves the way for the construction of high-performance MXenesbased self-powered SBDs for health monitoring.

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Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Cited by 5 publications

References 41 publications

Polarity Control of the Schottky Barrier in Wurtzite Ferroelectrics

Polarity Control of the Schottky Barrier in Wurtzite Ferroelectrics

Ultra‐High Detectivity MBene/Si vdW Schottky Photodiode for Color Single‐Pixel Imaging

High‐Barrier‐Height Ti₃C₂T_x/Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring

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Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Cited by 5 publications

References 41 publications

Polarity Control of the Schottky Barrier in Wurtzite Ferroelectrics

Polarity Control of the Schottky Barrier in Wurtzite Ferroelectrics

Ultra‐High Detectivity MBene/Si vdW Schottky Photodiode for Color Single‐Pixel Imaging

High‐Barrier‐Height Ti3C2Tx/Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring

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High‐Barrier‐Height Ti₃C₂T_x/Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring