Reversible quenching of photoluminescence in stain etched porous silicon at HNO 3 posttreatment and role of oxygen bonds

Study of oxide bands in p-type porous silicon layers

“…Important bands are also marked as vertical lines and correspond to the following. For the right side: SiH 2 wagging at 667 cm −1 [18], SiH 2 scissors at 902 cm −1 [25], SiOSi asymmetric stretch mode at 980 cm −1 [26], SiOSi stretch TO mode at 1045 cm −1 [25], and SiOSi asymmetric stretch mode at 1060 cm −1 [27]. For the left side: SiH stretch at 2087 cm −1 , SiH 2 stretch at 2108 cm −1 , O 2 SiH stretch at 2200 cm −1 , and O 3 SiH stretch at 2256 cm −1 [18].…”