Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Abstract

This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion∕Ioff∼104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

Electrical memory devices based on inorganic/organic nanocomposites

“…As in copper-ion memories, [73][74][75] mobile metallic ions from the electrodes or the nanoparticles can migrate to form a conductive filament between the two electrodes when a high enough voltage is applied to the device. It has been observed using a current-sensing atomic force microscope [76][77][78][79] and an infrared microscope 80 that only the switching occurred in localized areas of the devices. Highly conductive spots are created after the device is switched to the low conductive state.…”

Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

“…Unipolar switching is achieved by successive application of voltages with the same polarity, [27] whereas bipolar switching requires both positive and negative voltages for the writing or erasing process. [28,29] A 1D-1R device with bipolar memory cannot operate properly because it is not erasable due to the suppressed current at the reverse polarity.…”

All‐Organic Photopatterned One Diode‐One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] ONVM is one emerging technology that has been explored as the next generation data storage media. In literature, there are numerous reports regarding the switching mechanisms for ONVM devices, [15][16][17][18] as well as the development of new organic materials [15,[18][19][20][21] and device architectures [22][23][24][25][26][27] for ONVM applications. Research on novel device architectures can potentially generate more reliable organic memory devices with higher density and improved performance, while simultaneously mitigating misreading (cross-talk) issues.…”