Reversible switching of anomalous valley Hall effect in ferrovalley Janus 
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Sun, Rui; Liu, R.; Lu, Jiajun; Zhao, Xin-Hao; Hu, Chunguang; Yuan, Xiaobo; Ren, Jun

doi:10.1103/physrevb.105.235416

Cited by 34 publications

(12 citation statements)

References 52 publications

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“…Based on this research, we propose an idea here. Going beyond the existing paradigm, we propose the design philosophy of implementing valley polarization, especially the AVH effect in AFM van der Waals (vdW) HTS. − First, valley degrees of freedom, as intrinsic properties of materials, are closely related to the symmetry of the structure. H-phase SL-TMD HfN 2 , which exhibits a direct band gap at the hexagonal Brillouin zone (BZ), represents one of the most potential 2D materials for manipulating valley degree.…”

Section: Resultsmentioning

confidence: 99%

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Dong,

Jia,

et al. 2024

ACS Appl. Electron. Mater.

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The absence of an anomalous valley Hall (AVH) effect in HfN 2 can be attributed to its protection by the timeinversion (T) symmetry, resulting in a valley degeneracy in K + /K − valleys. On the other hand, MnPSe 3 is protected by T and spatial inversion (P) symmetries, which prohibits spin splitting and consequently hinders the achievement of the AVH. Here, by combining model analysis and first-principles calculation, we construct a HfN 2 /MnPSe 3 van der Waals (vdW) heterostructure (HTS). In HfN 2 /MnPSe 3 HTS, MnPSe 3 generates a magnetic exchange field that breaks the T symmetry of HfN 2 , resulting in the generation of an intrinsic spin valley Hall current. The introduction of the HfN 2 layer disrupts the PT symmetry of MnPSe 3 , leading to valley spin splitting in K + /K − valleys. Without PT symmetry protection, the AVH effect is observed in the MnPSe 3 layer of HfN 2 /MnPSe 3 HTS. The valley splitting of the HfN 2 layer and MnPSe 3 layer in HfN 2 /MnPSe 3 HTS gives rise to two distinct valleys in K + /K − points at the valence band maximum, respectively. Additionally, valley polarization in HfN 2 /MnPSe 3 HTS can be flipped simultaneously by reversing the magnetization of the Mn atom. Moreover, HfN 2 /MnPSe 3 /Sc 2 CO 2 ferroelectric HTS has been constructed to achieve precise control of valley-to-nonvalleyelectron conversion and semiconductor-to-metal conversion. Our work offers not only an alternative and controllable approach for realizing the spontaneous AVH effect in antiferromagnetic HTS, but also a platform for designing energy-efficient valleytronic devices.

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Section: Resultsmentioning

confidence: 99%

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Dong,

Jia,

et al. 2024

ACS Appl. Electron. Mater.

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“…39 The contrasting behavior of the K and K 0 valleys in the CBM compared to the sizable valley polarization in the VBM in monolayer Ru(OH) 2 can be attributed to the contributions of specific orbitals to the band edges. [56][57][58] As shown in Fig. S3(b)-(d of the Ru atom near the valley.…”

Section: Ferrovalley Characteristic and Physical Mechanism Of Valley ...mentioning

confidence: 91%

“…S3(b)-(d of the Ru atom near the valley. Since the FM ordering of monolayer Ru(OH) 2 breaks the spin degeneracy between the spin-up and spin-down bands, the SOC Hamiltonian only involves the interaction of the same spin states, which can be approximately written as, [56][57][58]…”

Section: Ferrovalley Characteristic and Physical Mechanism Of Valley ...mentioning

confidence: 99%

Ferrovalley and topological phase transition behavior in monolayer Ru(OH)₂

Wu,

Deng,

Tong

et al. 2023

J. Mater. Chem. C

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“…Due to high-quality crystal, sharp interfaces, and freedom of the constituent materials as well as stacking models, 2D vdW multiferroic HS provides an excellent platform for realizing nanoscale multifunctional spintronic devices . The strong interlayer magnetoelectric coupling has been successfully established in layered HS multiferroics stacking up atomic layers of ferromagnets and FE materials, which realizes the control of magnetocrystalline anisotropy, − magnetic phase transition, − Dzyaloshinskii–Moriya interaction, , topological phase, and valley splitting . Particularly, the reversible switching from semiconductor to half-metal in 2D vdW HS based on the FE substrate not only realizes the generation of the spin-polarized carriers but also allows the manipulation, ,− which opens up the possibility for applications of 2D spintronics devices for memory storage, especially for 2D spin field-effect transistors (sFET).…”

Section: Introductionmentioning

confidence: 99%

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

Chen,

Wang,

Guo

et al. 2024

ACS Appl. Nano Mater.

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To overcome the volatility and high-power dissipation in conventional control approaches in spin-dependent devices, such as spin memory devices, there is an urgent need to realize nonvolatile all-electric spin manipulation in two-dimensional van der Waals (vdW) ferromagnetic (FM) semiconductors. Herein, we investigate the electronic and transport features of the multiferroic heterostructure (HS) RuCl 2 /Al 2 S 3 built by coupling the ferrovalley semiconductor RuCl 2 monolayer with the ferroelectric (FE) Al 2 S 3 monolayer by employing first-principles density functional theory plus nonequilibrium Green's function transport theory. It is shown that the nonvolatile and reversible switching between the FM semiconductor and half-metallicity can be realized in the RuCl 2 /Al 2 S 3 HS by electrically controlling the FE polarization states of the Al 2 S 3 sublayer. Moreover, the large out-of-plane magnetic anisotropy and Curie temperature near room temperature of RuCl 2 can also survive in the vdW RuCl 2 /Al 2 S 3 HS, which is of practical importance. Notably, the FE sublayer Al 2 S 3 still retains its original semiconducting nature in different polarization states, which is beneficial to realize the polarization switching via an applied electric field. Furthermore, an all-electric controlled valve effect with an ultrahigh on/off ratio and pure spin-polarized current in the on state is confirmed in conceptual two-probe devices based on the RuCl 2 /Al 2 S 3 HS. These findings shed light on the potential applications of the all-electrically controlled vdW multiferroic HS RuCl 2 /Al 2 S 3 in compact and highly efficient information processing and data storage.

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Reversible switching of anomalous valley Hall effect in ferrovalley Janus 1T−CrOX (X=F,Cl,Br,I)

Cited by 34 publications

References 52 publications

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Ferrovalley and topological phase transition behavior in monolayer Ru(OH)₂

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

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Reversible switching of anomalous valley Hall effect in ferrovalley Janus 1T−CrOX (X=F,Cl,Br,I)

Cited by 34 publications

References 52 publications

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN2/MnPSe3 Heterostructure

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN2/MnPSe3 Heterostructure

Ferrovalley and topological phase transition behavior in monolayer Ru(OH)2

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl2/Al2S3 Heterostructures: Implications for Spin Memory Devices

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Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Ferrovalley and topological phase transition behavior in monolayer Ru(OH)₂

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices