Reversible Thermally Driven Phase Change of Layered In₂Se₃ for Integrated Photonics

Abstract

Two-dimensional In 2 Se 3 , an unconventional phasechange material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β′ phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β′-In 2 Se 3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In 2 Se 3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.

Photodetectors integrating waveguides and semiconductor materials

“…23–29 Secondly, the waveguide type is further divided into end-coupled waveguide, grating coupled waveguide, and ring waveguide. 30–32 Thirdly, the reported photodetectors with integrated waveguides mainly include infrared (IR) photodetectors, visible (VIS) photodetectors, and ultraviolet (UV) photodetectors. 33–38…”

Plasmonic‐Enhanced Polymer‐Stabilized Liquid Crystals Switching for Integrated Optical Attenuation

“…[16][17][18] PSLC films can also eliminate adverse effects such as liquid crystal backflow without additional energy consumption. [19] Moreover, the modulation of light transmission of the PSLC film can be regulated to switch between a light-scattering and a transparent state by adjusting the electric field. [20] Nevertheless, it is worth noting that this PSLC strategy can lead to increased drive voltages, consequently lowering the modulation efficiency.…”